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GaInNAs lattice-matched to GaAs for photodiodes

Ng, JS, Soong, WM, Steer, MJ, Hopkinson, M, David, JPR, Chamings, J, Adams, AR, Sweeney, SJ and Allam, J (2007) GaInNAs lattice-matched to GaAs for photodiodes Conference Proceedings - International Conference on Indium Phosphide and Related Materials. pp. 347-349.

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Abstract

We present optical and electrical characterization data obtained from bulk GaInNAs (lattice-matched to GaAs) diodes with varying GaInNAs composition. Good lattice-matching to GaAs, low reverse dark current and long wavelength absorption were achieved simultaneously, without the aid of post-growth annealing and use of antimony during the growth. © 2007 IEEE.

Item Type: Article
Authors :
NameEmailORCID
Ng, JSUNSPECIFIEDUNSPECIFIED
Soong, WMUNSPECIFIEDUNSPECIFIED
Steer, MJUNSPECIFIEDUNSPECIFIED
Hopkinson, MUNSPECIFIEDUNSPECIFIED
David, JPRUNSPECIFIEDUNSPECIFIED
Chamings, JUNSPECIFIEDUNSPECIFIED
Adams, ARUNSPECIFIEDUNSPECIFIED
Sweeney, SJUNSPECIFIEDUNSPECIFIED
Allam, JUNSPECIFIEDUNSPECIFIED
Date : 2007
Identification Number : 10.1109/ICIPRM.2007.381194
Depositing User : Symplectic Elements
Date Deposited : 28 Mar 2017 14:11
Last Modified : 31 Oct 2017 14:49
URI: http://epubs.surrey.ac.uk/id/eprint/733500

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