Near-field evolution in strongly pumped broad area diode lasers
Hempel, M, Tomm, JW, Elsaesser, T, Baeumler, M, Konstanzer, H and Mukherjee, J (2012) Near-field evolution in strongly pumped broad area diode lasers Proceedings of SPIE - The International Society for Optical Engineering, 8277 . ISSN 0277-786X
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Official URL: http://dx.doi.org/10.1117/12.905945
Many applications such as pumping of solid state lasers or ignition of explosives require high optical output powers during a short period. Pulsed operated diode lasers meet these requirements. They can be driven at elevated power levels, well above the ones specified for continuous wave (cw) operation. The optical near-field intensity of a diode laser in this operation regime is a key parameter since it determines the beam properties of the device. High power AlGaAs/GaAs quantum well broad area diode lasers are subjected to single pulse step tests carried out up to and beyond their ultimate limits of operation. Laser near-fields are monitored on a picosecond time scale using a streak-camera setup during pulse currents of up to ∼50 times the threshold current. A transition from gain guiding to thermally-induced index guiding of the near-field is shown. Further power increase is prevented by catastrophic optical damage (COD). This sudden failure mechanism is studied in conjunction with filamentary properties of the near-field. The defect growth dynamics resolved on the picosecond time scale is used to gather inside into the physics behind COD. © 2012 SPIE.
|Additional Information:||Martin Hempel ; Jens W. Tomm ; Martina Bäumler ; Helmer Konstanzer ; Jayanta Mukherjee and Thomas Elsässer "Near-field evolution in strongly pumped broad area diode lasers", Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 82771H (February 9, 2012) Copyright 2012 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited. http://dx.doi.org/10.1117/12.905945|
|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute|
|Deposited By:||Symplectic Elements|
|Deposited On:||04 Dec 2012 10:41|
|Last Modified:||16 Feb 2013 15:28|
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