Near-field characteristics of broad area diode lasers during catastrophic optical damage failure
Hempel, M, Tomm, JW, Elsaesser, T, Baeumler, M, Konstanzer, H and Mukherjee, J (2012) Near-field characteristics of broad area diode lasers during catastrophic optical damage failure Proceedings of SPIE - The International Society for Optical Engineering, 8432 . ISSN 0277-786X
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Official URL: http://dx.doi.org/10.1117/12.922395
One of the failure mechanisms preventing diode lasers in reaching ultra high optical output powers is the catastrophic optical damage (COD). It is a sudden degradation mechanism which impairs the device functionality completely. COD is caused by a positive feedback loop of absorbing laser light and increasing temperature at a small portion of the active material, leading to a thermal runaway on a nanosecond timescale. We analyze commercial gain-guided AlGaAs/GaAs quantum well broad area diode lasers in single pulse step tests. The near-field emission on the way to and at the COD is resolved on a picosecond time scale by a streak-camera combined with a microscope. In the final phase of the step tests the COD is occurring at ~50 times threshold current. The growth of the COD defect site is monitored and defect propagation velocities between 30 and 190 μm/μs are determined. The final shape of the damage is verified by opening the device and taking a micro-photoluminescence map of the active layer. © 2012 Copyright Society of Photo-Optical Instrumentation Engineers (SPIE).
|Additional Information:||Martin Hempel ; Jens W. Tomm ; Martina Baeumler ; Helmer Konstanzer ; Jayanta Mukherjee and Thomas Elsaesser "Near-field characteristics of broad area diode lasers during catastrophic optical damage failure", Proc. SPIE 8432, Semiconductor Lasers and Laser Dynamics V, 84320O (June 1, 2012) Copyright 2012 Society of Photo-Optical Instrumentation Engineers. One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited. http://dx.doi.org/10.1117/12.922395|
|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute|
|Deposited By:||Symplectic Elements|
|Deposited On:||04 Dec 2012 10:29|
|Last Modified:||16 Feb 2013 15:13|
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