Recombination, transport and loss mechanisms in p-doped InAs/GaAs quantum dots
Marko, IP, Masse, NF, Sweeney, SJ, Adams, AR, Hatori, N, Sugawara, M, Jantsch, W and Schaffler, F (2007) Recombination, transport and loss mechanisms in p-doped InAs/GaAs quantum dots In: 28th International Conference on the Physics of Semiconductors (ICPS-28), 2006-07-24 - 2006-07-28, Vienna, AUSTRIA.
Recombination, transport and loss mechanisms in p-doped InAs-GaAs quantum dots.pdf
Available under License : See the attached licence file.
|Item Type:||Conference or Workshop Item (Conference Paper)|
|Divisions :||Faculty of Engineering and Physical Sciences > Physics|
|Date :||1 January 2007|
|Uncontrolled Keywords :||Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Optics, Physics, Multidisciplinary, Physics, Condensed Matter, Engineering, Physics, quantum dot laser, p-doping, recombination mechanisms, non-radiative recombination, carrier transport, LASERS|
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|Additional Information :||<p>Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.</p> <p>The following article appeared in AIP Conference Proceedings,and may be found at <A HREF="http://proceedings.aip.org/resource/2/apcpcs/893/1/837_1?isAuthorized=no /<A>|
|Depositing User :||Symplectic Elements|
|Date Deposited :||14 Dec 2012 06:36|
|Last Modified :||17 Jan 2015 14:59|
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