Recombination, transport and loss mechanisms in p-doped InAs/GaAs quantum dots

Marko, IP, Masse, NF, Sweeney, SJ, Adams, AR, Hatori, N, Sugawara, M, Jantsch, W and Schaffler, F (2007) Recombination, transport and loss mechanisms in p-doped InAs/GaAs quantum dots In: 28th International Conference on the Physics of Semiconductors (ICPS-28), 2006-07-24 - 2006-07-28, Vienna, AUSTRIA.

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Item Type:	Conference or Workshop Item (Conference Paper)
Divisions :	Faculty of Engineering and Physical Sciences > Physics
Authors :	Name Email ORCID Marko, IP Masse, NF Sweeney, SJ Adams, AR Hatori, N Sugawara, M Jantsch, W Schaffler, F
Date :	1 January 2007
Contributors :	Contribution Name Email ORCID http://www.loc.gov/loc.terms/relators/PBL AMER INST PHYSICS,
Uncontrolled Keywords :	Science & Technology, Technology, Physical Sciences, Engineering, Electrical & Electronic, Optics, Physics, Multidisciplinary, Physics, Condensed Matter, Engineering, Physics, quantum dot laser, p-doping, recombination mechanisms, non-radiative recombination, carrier transport, LASERS
Related URLs :	Author
Additional Information :	<p>Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.</p> <p>The following article appeared in AIP Conference Proceedings,and may be found at <A HREF="http://proceedings.aip.org/resource/2/apcpcs/893/1/837_1?isAuthorized=no /<A>
Depositing User :	Symplectic Elements
Date Deposited :	14 Dec 2012 06:36
Last Modified :	31 Oct 2017 14:48
URI:	http://epubs.surrey.ac.uk/id/eprint/733188

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