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The importance of recombination via excited states in InAs/GaAs 1.3μm quantum dot lasers

Crowley, MT, Marko, IP, Masse, NF, Andreev, AD, Sweeney, SJ, O'Reilly, EP and Adams, AR (2008) The importance of recombination via excited states in InAs/GaAs 1.3μm quantum dot lasers In: 21st ISLC 2008, 2008-09-14 - 2008-09-18, Sorento, Italy.

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Abstract

The optical matrix element for excited-states is significantly weaker than the ground-state leading to thermally stable radiative recombination. This is not so for non-radiative Auger recombination, causing a sharp increase in threshold current with temperature.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Crowley, MTUNSPECIFIEDUNSPECIFIED
Marko, IPUNSPECIFIEDUNSPECIFIED
Masse, NFUNSPECIFIEDUNSPECIFIED
Andreev, ADUNSPECIFIEDUNSPECIFIED
Sweeney, SJUNSPECIFIEDUNSPECIFIED
O'Reilly, EPUNSPECIFIEDUNSPECIFIED
Adams, ARUNSPECIFIEDUNSPECIFIED
Date : 2008
Identification Number : 10.1109/ISLC.2008.4636037
Contributors :
ContributionNameEmailORCID
http://www.loc.gov/loc.terms/relators/PBLIEEE, UNSPECIFIEDUNSPECIFIED
Depositing User : Symplectic Elements
Date Deposited : 28 Mar 2017 14:11
Last Modified : 31 Oct 2017 14:48
URI: http://epubs.surrey.ac.uk/id/eprint/733183

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