University of Surrey

Test tubes in the lab Research in the ATI Dance Research

Dark current mechanisms in InxGa1-xAs 1-yNy

Tan, LJJ, Soong, WS, Tan, SL, Goh, YL, Steer, MJ, Ng, JS, David, JPR, Marko, IP, Chamings, J, Allam, J , Sweeney, SJ and Adams, AR (2009) Dark current mechanisms in InxGa1-xAs 1-yNy In: LEOS '09, 2009-10-04 - 2009-10-08, Belek-Antalya, Turkey.

[img] Text
Dark current mechanisms LEOS.pdf
Restricted to Repository staff only
Available under License : See the attached licence file.

Download (369kB)
[img] Text (licence)
Restricted to Repository staff only

Download (33kB)


In order to extend the photo response of GaAs to optical telecommunication wavelengths, In and N can be incorporated into GaAs to yield a perfect lattice match of InxGa1-xAs1-yNy with GaAs with a bandgap that strongly decreases with increasing N composition. The potential usage of such a material as photodetectors and photovoltaic applications has been reported.In this work, we investigate the dark current mechanisms in the InxGa1-xAs1-yNy material.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
Tan, LJJ
Soong, WS
Tan, SL
Goh, YL
Steer, MJ
Ng, JS
David, JPR
Marko, IP
Chamings, J
Allam, J
Sweeney, SJ
Adams, AR
Date : 2009
DOI : 10.1109/LEOS.2009.5343290
Contributors :
Depositing User : Symplectic Elements
Date Deposited : 28 Mar 2017 14:11
Last Modified : 31 Oct 2017 14:48

Actions (login required)

View Item View Item


Downloads per month over past year

Information about this web site

© The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
+44 (0)1483 300800