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Dark current mechanisms in InxGa1-xAs 1-yNy

Tan, LJJ, Soong, WS, Tan, SL, Goh, YL, Steer, MJ, Ng, JS, David, JPR, Marko, IP, Chamings, J, Allam, J, Sweeney, SJ and Adams, AR (2009) Dark current mechanisms in InxGa1-xAs 1-yNy In: LEOS '09, 2009-10-04 - 2009-10-08, Belek-Antalya, Turkey.

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Abstract

In order to extend the photo response of GaAs to optical telecommunication wavelengths, In and N can be incorporated into GaAs to yield a perfect lattice match of InxGa1-xAs1-yNy with GaAs with a bandgap that strongly decreases with increasing N composition. The potential usage of such a material as photodetectors and photovoltaic applications has been reported.In this work, we investigate the dark current mechanisms in the InxGa1-xAs1-yNy material.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
AuthorsEmailORCID
Tan, LJJUNSPECIFIEDUNSPECIFIED
Soong, WSUNSPECIFIEDUNSPECIFIED
Tan, SLUNSPECIFIEDUNSPECIFIED
Goh, YLUNSPECIFIEDUNSPECIFIED
Steer, MJUNSPECIFIEDUNSPECIFIED
Ng, JSUNSPECIFIEDUNSPECIFIED
David, JPRUNSPECIFIEDUNSPECIFIED
Marko, IPUNSPECIFIEDUNSPECIFIED
Chamings, JUNSPECIFIEDUNSPECIFIED
Allam, JUNSPECIFIEDUNSPECIFIED
Sweeney, SJUNSPECIFIEDUNSPECIFIED
Adams, ARUNSPECIFIEDUNSPECIFIED
Date : 2009
Identification Number : https://doi.org/10.1109/LEOS.2009.5343290
Contributors :
ContributionNameEmailORCID
PublisherIEEE, UNSPECIFIEDUNSPECIFIED
Depositing User : Symplectic Elements
Date Deposited : 28 Mar 2017 14:11
Last Modified : 28 Mar 2017 14:11
URI: http://epubs.surrey.ac.uk/id/eprint/733180

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