Thermal behavior of 1.55 μm (100) InAs/InP-based quantum dot lasers
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Sayid, SA, Marko, IP, Adams, AR, Sweeney, SJ, Barrios, P and Poole, P (2010) Thermal behavior of 1.55 μm (100) InAs/InP-based quantum dot lasers In: ISLC 2010, 2010-09-26 - 2010-09-30, Kyoto, Japan.
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Abstract
Unlike InAs/GaAs quantum dot lasers, in 1.55μm InAs/InP devices, non-radiative recombination dominates device behavior from very low temperature (~40K) and accounts for ~94% of Jth at room temperature with a To of ~72K from 220K-290K.
Item Type: | Conference or Workshop Item (UNSPECIFIED) |
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Divisions : | Surrey research (other units) |
Authors : | Sayid, SA, Marko, IP, Adams, AR, Sweeney, SJ, Barrios, P and Poole, P |
Date : | 2010 |
DOI : | 10.1109/ISLC.2010.5642746 |
Depositing User : | Symplectic Elements |
Date Deposited : | 28 Mar 2017 14:11 |
Last Modified : | 23 Jan 2020 12:51 |
URI: | http://epubs.surrey.ac.uk/id/eprint/733174 |
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