Thermal behavior of 1.55 μm (100) InAs/InP-based quantum dot lasers

Sayid, SA, Marko, IP, Adams, AR, Sweeney, SJ, Barrios, P and Poole, P (2010) Thermal behavior of 1.55 μm (100) InAs/InP-based quantum dot lasers In: ISLC 2010, 2010-09-26 - 2010-09-30, Kyoto, Japan.

	Text Thermal behavior of 1.55 μm (100) InAs-InP-based quantum dot lasers.pdf Restricted to Repository staff only Available under License : See the attached licence file. Download (232kB)
	Text (licence) SRI_deposit_agreement.pdf Restricted to Repository staff only Download (33kB)

Abstract

Unlike InAs/GaAs quantum dot lasers, in 1.55μm InAs/InP devices, non-radiative recombination dominates device behavior from very low temperature (~40K) and accounts for ~94% of Jth at room temperature with a To of ~72K from 220K-290K.

Item Type:	Conference or Workshop Item (UNSPECIFIED)
Authors :	Name Email ORCID Sayid, SA Marko, IP Adams, AR Sweeney, SJ Barrios, P Poole, P
Date :	2010
DOI :	10.1109/ISLC.2010.5642746
Depositing User :	Symplectic Elements
Date Deposited :	28 Mar 2017 14:11
Last Modified :	31 Oct 2017 14:48
URI:	http://epubs.surrey.ac.uk/id/eprint/733174

Actions (login required)

View Item

Downloads