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Thermal behavior of 1.55 μm (100) InAs/InP-based quantum dot lasers

Sayid, SA, Marko, IP, Adams, AR, Sweeney, SJ, Barrios, P and Poole, P (2010) Thermal behavior of 1.55 μm (100) InAs/InP-based quantum dot lasers In: ISLC 2010, 2010-09-26 - 2010-09-30, Kyoto, Japan.

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Abstract

Unlike InAs/GaAs quantum dot lasers, in 1.55μm InAs/InP devices, non-radiative recombination dominates device behavior from very low temperature (~40K) and accounts for ~94% of Jth at room temperature with a To of ~72K from 220K-290K.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Authors :
NameEmailORCID
Sayid, SAUNSPECIFIEDUNSPECIFIED
Marko, IPUNSPECIFIEDUNSPECIFIED
Adams, ARUNSPECIFIEDUNSPECIFIED
Sweeney, SJUNSPECIFIEDUNSPECIFIED
Barrios, PUNSPECIFIEDUNSPECIFIED
Poole, PUNSPECIFIEDUNSPECIFIED
Date : 2010
Identification Number : 10.1109/ISLC.2010.5642746
Depositing User : Symplectic Elements
Date Deposited : 28 Mar 2017 14:11
Last Modified : 31 Oct 2017 14:48
URI: http://epubs.surrey.ac.uk/id/eprint/733174

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