Experimental determination of the band gap dependence of Auger recombination in InGaAs/InP multiple quantum well lasers at room temperature

Masse, NF, Adams, AR and Sweeney, SJ (2007) Experimental determination of the band gap dependence of Auger recombination in InGaAs/InP multiple quantum well lasers at room temperature APPLIED PHYSICS LETTERS, 90 (16), ARTN 1.

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Item Type:	Article
Divisions :	Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics Faculty of Engineering and Physical Sciences > Physics
Authors :	Name Email ORCID Masse, NF UNSPECIFIED UNSPECIFIED Adams, AR UNSPECIFIED UNSPECIFIED Sweeney, SJ UNSPECIFIED UNSPECIFIED
Date :	16 April 2007
Identification Number :	https://doi.org/10.1063/1.2722041
Uncontrolled Keywords :	Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, SEMICONDUCTOR-LASERS, THRESHOLD CURRENT, HIGH-PRESSURE
Related URLs :	Author
Additional Information :	Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 90 (16) 161113 and may be found at http://dx.doi.org/10.1063/1.2722041
Depositing User :	Mr Adam Field
Date Deposited :	16 Nov 2012 11:39
Last Modified :	14 Feb 2015 14:33
URI:	http://epubs.surrey.ac.uk/id/eprint/732765

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