Experimental determination of the band gap dependence of Auger recombination in InGaAs/InP multiple quantum well lasers at room temperature
Masse, NF, Adams, AR and Sweeney, SJ (2007) Experimental determination of the band gap dependence of Auger recombination in InGaAs/InP multiple quantum well lasers at room temperature APPLIED PHYSICS LETTERS, 90 (16), ARTN 1.
Available under License : See the attached licence file.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Faculty of Engineering and Physical Sciences > Physics
|Date :||16 April 2007|
|Identification Number :||https://doi.org/10.1063/1.2722041|
|Uncontrolled Keywords :||Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, SEMICONDUCTOR-LASERS, THRESHOLD CURRENT, HIGH-PRESSURE|
|Related URLs :|
|Additional Information :||Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 90 (16) 161113 and may be found at http://dx.doi.org/10.1063/1.2722041|
|Depositing User :||Mr Adam Field|
|Date Deposited :||16 Nov 2012 11:39|
|Last Modified :||14 Feb 2015 14:33|
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