Experimental determination of the band gap dependence of Auger recombination in InGaAs/InP multiple quantum well lasers at room temperature
Masse, NF, Adams, AR and Sweeney, SJ (2007) Experimental determination of the band gap dependence of Auger recombination in InGaAs/InP multiple quantum well lasers at room temperature APPLIED PHYSICS LETTERS, 90 (16). ? - ?. ISSN 0003-6951
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The band gap dependencies of the threshold current and its radiative component are measured using high pressure techniques. Detailed theoretical calculations show that the band gap dependence of the internal losses plays a significant role in the band gap dependence of the radiative current. Temperature dependence measurements show that the radiative current accounts for 20% of the total threshold current at room temperature. This allows us to determine the pressure dependence of the non-radiative Auger recombination current, and hence to experimentally obtain the variation of the Auger coefficient C with band gap. (c) 2007 American Institute of Physics.
|Additional Information:||Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 90 (16) 161113 and may be found at http://dx.doi.org/10.1063/1.2722041|
|Uncontrolled Keywords:||Science & Technology, Physical Sciences, Physics, Applied, Physics, SEMICONDUCTOR-LASERS, THRESHOLD CURRENT, HIGH-PRESSURE|
|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Faculty of Engineering and Physical Sciences > Physics
|Depositing User:||Mr Adam Field|
|Date Deposited:||16 Nov 2012 11:39|
|Last Modified:||23 Sep 2013 19:46|
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