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Long wavelength bulk GaInNAs p-i-n photodiodes lattice matched to GaAs

Ng, JS, Soong, WM, Steer, MJ, Hopkinson, M, David, JPR, Chamings, J, Sweeney, SJ and Adams, AR (2007) Long wavelength bulk GaInNAs p-i-n photodiodes lattice matched to GaAs JOURNAL OF APPLIED PHYSICS, 101 (6). ? - ?. ISSN 0021-8979

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We report bulk GaInNAs p-i-n photodiodes lattice-matched to GaAs substrates, grown by solid source molecular beam epitaxy with photoresponses out to similar to 1.3 mu m. The as-grown samples were characterized optically, structurally, and electrically. A low background doping concentration in the range of 10(14)-10(15) cm(-3) was obtained in the samples. One of the samples with a 0.5 mu m thick GaInNAs absorbing layer gave a responsivity of 0.11 A/W for a band edge of 1.28 mu m at reverse bias of 2 V.

Item Type: Article
Additional Information: Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics, 101 (6) 064506 and may be found at
Uncontrolled Keywords: Science & Technology, Physical Sciences, Physics, Applied, Physics, MOLECULAR-BEAM EPITAXY, 1.3 MU-M, GROWTH, TEMPERATURE
Related URLs:
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Faculty of Engineering and Physical Sciences > Physics
Depositing User: Mr Adam Field
Date Deposited: 16 Nov 2012 11:36
Last Modified: 23 Sep 2013 19:46

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