Physical properties and efficiency of GaNP light emitting diodes
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Chamings, J, Ahmed, S, Sweeney, SJ, Odnoblyudov, VA and Tu, CW (2008) Physical properties and efficiency of GaNP light emitting diodes APPLIED PHYSICS LETTERS, 92 (2). ? - ?. ISSN 0003-6951
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Official URL: http://dx.doi.org/10.1063/1.2830696
Abstract
GaNP/GaP is promising for yellow-amber-red light emitting diodes (LEDs). In this study, pressure and temperature dependent electroluminescence and photocurrent measurements on bulk GaP/GaN0.006P0.994/GaP LED structures are presented. Below similar to 110 K, emission is observed from several localized nitrogen states. At room temperature, the band-edge energy increases weakly with pressure at a rate of +1.6 meV/kbar, substantially lower than the Gamma band gap of GaP (+9.5 meV/kbar). Thus, despite the multiplicity of nitrogen levels, the band anticrossing model reasonably describes this system based on an average of the nitrogen states. Furthermore, carrier leakage into the X minima of GaP reduces the efficiency in GaNP-LEDs with increasing pressure.
| Item Type: | Article |
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| Additional Information: | Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied Physics Letters, 92 (2) 021101 and may be found at http://dx.doi.org/10.1063/1.2830696 |
| Uncontrolled Keywords: | Science & Technology, Physical Sciences, Physics, Applied, Physics, HYDROSTATIC-PRESSURE, GAINNAS ALLOYS, GAP-N, BAND, DEPENDENCE |
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics Faculty of Engineering and Physical Sciences > Physics |
| ID Code: | 732763 |
| Deposited By: | Mr Adam Field |
| Deposited On: | 16 Nov 2012 11:28 |
| Last Modified: | 08 Jun 2013 16:17 |
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