Physical properties and efficiency of GaNP light emitting diodes
Chamings, J, Ahmed, S, Sweeney, SJ, Odnoblyudov, VA and Tu, CW (2008) Physical properties and efficiency of GaNP light emitting diodes APPLIED PHYSICS LETTERS, 92 (2), ARTN 0.
Available under License : See the attached licence file.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Faculty of Engineering and Physical Sciences > Physics
|Date :||14 January 2008|
|Identification Number :||https://doi.org/10.1063/1.2830696|
|Uncontrolled Keywords :||Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, HYDROSTATIC-PRESSURE, GAINNAS ALLOYS, GAP-N, BAND, DEPENDENCE|
|Related URLs :|
|Additional Information :||Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied Physics Letters, 92 (2) 021101 and may be found at http://dx.doi.org/10.1063/1.2830696|
|Depositing User :||Mr Adam Field|
|Date Deposited :||16 Nov 2012 11:28|
|Last Modified :||04 Jul 2015 13:34|
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