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Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers

Chamings, J, Adams, AR, Sweeney, SJ, Kunert, B, Volz, K and Stolz, W (2008) Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers APPLIED PHYSICS LETTERS, 93 (10). ? - ?. ISSN 0003-6951

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We report on the properties of GaNAsP/GaP lasers which offer a potential route to producing lasers monolithically on silicon. Lasing has been observed over a wide temperature range with pulsed threshold current density of 2.5 kA/cm2 at 80 K (lambda=890nm). Temperature dependence measurements show that the radiative component of the threshold is relatively temperature stable while the overall threshold current is temperature sensitive. A sublinear variation of spontaneous emission versus current coupled with a decrease in external quantum efficiency with increasing temperature and an increase in threshold current with hydrostatic pressure implies that a carrier leakage path is the dominant carrier recombination mechanism.

Item Type: Article
Additional Information: Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied Physics Letters, 93 (10) 101108 and may be found at
Uncontrolled Keywords: Science & Technology, Physical Sciences, Physics, Applied, Physics, QUANTUM-WELL LASERS, GAINNAS ALLOYS, RECOMBINATION, PERFORMANCE, EPITAXY, AUGER
Related URLs:
Divisions: Faculty of Engineering and Physical Sciences > Physics
Depositing User: Mr Adam Field
Date Deposited: 16 Nov 2012 10:24
Last Modified: 23 Sep 2013 19:46

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