Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers
Chamings, J, Adams, AR, Sweeney, SJ, Kunert, B, Volz, K and Stolz, W (2008) Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers APPLIED PHYSICS LETTERS, 93 (10). ? - ?. ISSN 0003-6951
Available under License : See the attached licence file.
Official URL: http://dx.doi.org/10.1063/1.2975845
We report on the properties of GaNAsP/GaP lasers which offer a potential route to producing lasers monolithically on silicon. Lasing has been observed over a wide temperature range with pulsed threshold current density of 2.5 kA/cm2 at 80 K (lambda=890nm). Temperature dependence measurements show that the radiative component of the threshold is relatively temperature stable while the overall threshold current is temperature sensitive. A sublinear variation of spontaneous emission versus current coupled with a decrease in external quantum efficiency with increasing temperature and an increase in threshold current with hydrostatic pressure implies that a carrier leakage path is the dominant carrier recombination mechanism.
|Additional Information:||Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied Physics Letters, 93 (10) 101108 and may be found at http://dx.doi.org/10.1063/1.2975845|
|Uncontrolled Keywords:||Science & Technology, Physical Sciences, Physics, Applied, Physics, QUANTUM-WELL LASERS, GAINNAS ALLOYS, RECOMBINATION, PERFORMANCE, EPITAXY, AUGER|
|Divisions:||Faculty of Engineering and Physical Sciences > Physics|
|Deposited By:||Mr Adam Field|
|Deposited On:||16 Nov 2012 10:24|
|Last Modified:||29 Apr 2013 14:35|
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