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Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers

Chamings, J, Adams, AR, Sweeney, SJ, Kunert, B, Volz, K and Stolz, W (2008) Temperature dependence and physical properties of Ga(NAsP)/GaP semiconductor lasers APPLIED PHYSICS LETTERS, 93 (10). ? - ?. ISSN 0003-6951

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Item Type: Article
Additional Information: Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.The following article appeared in Applied Physics Letters, 93 (10) 101108 and may be found at http://dx.doi.org/10.1063/1.2975845
Uncontrolled Keywords: Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, QUANTUM-WELL LASERS, GAINNAS ALLOYS, RECOMBINATION, PERFORMANCE, EPITAXY, AUGER
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Divisions: Faculty of Engineering and Physical Sciences > Physics
Depositing User: Mr Adam Field
Date Deposited: 16 Nov 2012 10:24
Last Modified: 13 Sep 2014 01:52
URI: http://epubs.surrey.ac.uk/id/eprint/732762

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