Elemental thin film depth profiles by ion beam analysis using simulated annealing - a new tool
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Jeynes, C, Barradas, NP, Marriott, PK, Boudreault, G, Jenkin, M, Wendler, E and Webb, RP (2003) Elemental thin film depth profiles by ion beam analysis using simulated annealing - a new tool JOURNAL OF PHYSICS D-APPLIED PHYSICS, 36 (7). R97 - R126. ISSN 0022-3727
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Official URL: http://dx.doi.org/10.1088/0022-3727/36/7/201
| Item Type: | Article |
|---|---|
| Additional Information: | Copyright 2003 Institute of Physics. This is the author's accepted manuscript. |
| Uncontrolled Keywords: | Science & Technology, Physical Sciences, Physics, Applied, Physics, RUTHERFORD BACKSCATTERING SPECTRA, SCATTERING CROSS-SECTION, AMORPHOUS GALLIUM NITRIDE, RESONANCE PLASMA SOURCE, MAXIMUM-ENTROPY METHOD, ELASTIC BACKSCATTERING, NUCLEAR MICROPROBE, SURFACE-ROUGHNESS, METAL/CERAMIC INTERFACES, METAL NANOPARTICLES |
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre |
| Related URLs: | |
| ID Code: | 732756 |
| Deposited By: | Symplectic Elements |
| Deposited On: | 16 Nov 2012 09:56 |
| Last Modified: | 28 Apr 2013 14:35 |
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