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Elemental thin film depth profiles by ion beam analysis using simulated annealing - a new tool

Jeynes, C, Barradas, NP, Marriott, PK, Boudreault, G, Jenkin, M, Wendler, E and Webb, RP (2003) Elemental thin film depth profiles by ion beam analysis using simulated annealing - a new tool JOURNAL OF PHYSICS D-APPLIED PHYSICS, 36 (7). R97 - R126. ISSN 0022-3727

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Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre
Authors :
AuthorsEmail
Jeynes, CUNSPECIFIED
Barradas, NPUNSPECIFIED
Marriott, PKUNSPECIFIED
Boudreault, GUNSPECIFIED
Jenkin, MUNSPECIFIED
Wendler, EUNSPECIFIED
Webb, RPUNSPECIFIED
Date : 7 April 2003
Identification Number : 10.1088/0022-3727/36/7/201
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, RUTHERFORD BACKSCATTERING SPECTRA, SCATTERING CROSS-SECTION, AMORPHOUS GALLIUM NITRIDE, RESONANCE PLASMA SOURCE, MAXIMUM-ENTROPY METHOD, ELASTIC BACKSCATTERING, NUCLEAR MICROPROBE, SURFACE-ROUGHNESS, ALPHA-PARTICLES, METAL/CERAMIC INTERFACES
Related URLs :
Additional Information : Copyright 2003 Institute of Physics. This is the author's accepted manuscript.
Depositing User : Symplectic Elements
Date Deposited : 16 Nov 2012 09:56
Last Modified : 20 Jun 2015 13:33
URI: http://epubs.surrey.ac.uk/id/eprint/732756

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