Efficiency-limiting processes in Ga(NAsP)/GaP quantum well lasers
Hossain, N, Jin, SR, Liebich, S, Zimprich, M, Volz, K, Kunert, B, Stolz, W and Sweeney, SJ (2012) Efficiency-limiting processes in Ga(NAsP)/GaP quantum well lasers APPLIED PHYSICS LETTERS, 101 (1). ? - ?. ISSN 0003-6951
APL v101 2012 n011107.pdf
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We report on the carrier recombination mechanisms in dilute nitride Ga(NAsP)/GaP quantum well lasers. Spontaneous emission measurements show that defect-related recombination in the devices is less significant compared with other GaAs-based dilute nitride lasers. From temperature dependent measurements, we find that the threshold current density, J is dominated by non-radiative recombination process(es), which account for at least 91 of J at room temperature. The characteristic temperature, T (T ) is measured to be ∼104 K (∼99 K) around 200 K, which drops to ∼58 K ( ∼37 K) around room temperature. Hydrostatic pressure measurements reveal a strong increase of threshold current with increasing pressure. This implies that current leakage dominates carrier recombination which is also responsible for their low T and T values at room temperature. © 2012 American Institute of Physics.
Copyright 2011 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
The following article appeared in Applied Physics Letters, 101 (1) 011107 and may be found at N. Hossain et al., Appl. Phys.Lett. 101, 011107 (2012)
|Uncontrolled Keywords:||Science & Technology, Physical Sciences, Physics, Applied, Physics, COMPOUND SEMICONDUCTORS, SILICON, PERFORMANCE, SUBSTRATE, SYSTEMS, EPITAXY|
|Divisions:||Faculty of Engineering and Physical Sciences > Physics|
|Depositing User:||Symplectic Elements|
|Date Deposited:||06 Nov 2012 09:42|
|Last Modified:||23 Sep 2013 19:44|
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