Effects of rapid thermal annealing on GaAs1-xBix alloys
Mohmad, AR, Bastiman, F, Hunter, CJ, Richards, R, Sweeney, SJ, Ng, JS and David, JPR (2012) Effects of rapid thermal annealing on GaAs1-xBix alloys APPLIED PHYSICS LETTERS, 101 (1). ? - ?. ISSN 0003-6951
APL v101 2012 n012106.pdf
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The effects of rapid thermal annealing on the optical and structural properties of GaAs Bi alloys for x ranging from 0.022 to 0.065 were investigated. At room temperature, the annealed GaAs Bi showed modest improvement (∼3 times) in photoluminescence (PL) while the PL peak wavelength remained relatively unchanged. It was found that bismuth related defects are not easily removed by annealing and the PL improvement may be dominated by the reduction of other types of defects including arsenic and gallium related defects. Also, the optimum annealing temperature is Bi composition dependent. For samples with x < 0.048, the optimum annealing temperature is 700 °C but reduces to 600 °C for higher compositions. © 2012 American Institute of Physics.
Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
The following article appeared in Applied Physics Letters, 101 012106 (2012) and may be found at A.R. Mohmad et al., Appl. Phys.Lett. 101, 012106 (2012)
|Uncontrolled Keywords:||Science & Technology, Physical Sciences, Physics, Applied, Physics, NITROGEN, EPITAXY, GAASBI|
|Divisions:||Faculty of Engineering and Physical Sciences > Physics|
|Depositing User:||Symplectic Elements|
|Date Deposited:||06 Nov 2012 09:38|
|Last Modified:||23 Sep 2013 19:44|
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