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Band engineering in dilute nitride and bismide semiconductor lasers

Broderick, CA, Usman, M, O'Reilly, EP, Broderick, CA, O'Reilly, EP and Sweeney, SJ (2012) Band engineering in dilute nitride and bismide semiconductor lasers Semiconductor Science and Technology, 27 (9).

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Abstract

Highly mismatched semiconductor alloys such as GaN As and GaBi As have several novel electronic properties, including a rapid reduction in energy gap with increasing x and also, for GaBiAs, a strong increase in spin-orbit-splitting energy with increasing Bi composition. We review here the electronic structure of such alloys and their consequences for ideal lasers. We then describe the substantial progress made in the demonstration of actual GaInNAs telecommunication (telecom) lasers. These have characteristics comparable to conventional InP-based devices. This includes a strong Auger contribution to the threshold current. We show, however, that the large spin-orbit-splitting energy in GaBiAs and GaBiNAs could lead to the suppression of the dominant Auger recombination loss mechanism, finally opening the route to efficient temperature-stable telecomm and longer wavelength lasers with significantly reduced power consumption. © 2012 IOP Publishing Ltd.

Item Type: Article
Authors :
AuthorsEmailORCID
Broderick, CAUNSPECIFIEDUNSPECIFIED
Usman, MUNSPECIFIEDUNSPECIFIED
O'Reilly, EPUNSPECIFIEDUNSPECIFIED
Broderick, CAUNSPECIFIEDUNSPECIFIED
O'Reilly, EPUNSPECIFIEDUNSPECIFIED
Sweeney, SJUNSPECIFIEDUNSPECIFIED
Date : September 2012
Identification Number : https://doi.org/10.1088/0268-1242/27/9/094011
Depositing User : Symplectic Elements
Date Deposited : 28 Mar 2017 14:10
Last Modified : 28 Mar 2017 14:10
URI: http://epubs.surrey.ac.uk/id/eprint/729741

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