The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing
Batool, Z, Hild, K, Hosea, TJC, Lu, X, Tiedje, T and Sweeney, SJ (2012) The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing JOURNAL OF APPLIED PHYSICS, 111 (11), ARTN 1.
Available under License : See the attached licence file.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics|
|Date :||1 June 2012|
|Identification Number :||https://doi.org/10.1063/1.4728028|
|Uncontrolled Keywords :||Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, MOLECULAR-BEAM EPITAXY, MODULATION SPECTROSCOPY, GAAS1-XBIX, PHOTOREFLECTANCE, SEMICONDUCTORS, TEMPERATURE, DEPENDENCE, GAP|
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|Additional Information :||
Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
The following article appeared in Journal of Applied Physics 111 (11) 113108 and may be found at Z. Batool et al., JAP 111, 113108 (2012)
|Depositing User :||Symplectic Elements|
|Date Deposited :||11 Oct 2012 09:57|
|Last Modified :||05 Jul 2015 01:34|
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