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The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing

Batool, Z, Hild, K, Hosea, TJC, Lu, X, Tiedje, T and Sweeney, SJ (2012) The electronic band structure of GaBiAs/GaAs layers: Influence of strain and band anti-crossing JOURNAL OF APPLIED PHYSICS, 111 (11). ? - ?. ISSN 0021-8979

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Item Type: Article
Additional Information:

Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.

The following article appeared in Journal of Applied Physics 111 (11) 113108 and may be found at Z. Batool et al., JAP 111, 113108 (2012)

Uncontrolled Keywords: Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, MOLECULAR-BEAM EPITAXY, MODULATION SPECTROSCOPY, GAAS1-XBIX, PHOTOREFLECTANCE, SEMICONDUCTORS, TEMPERATURE, DEPENDENCE, GAP
Related URLs:
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Depositing User: Symplectic Elements
Date Deposited: 11 Oct 2012 09:57
Last Modified: 11 Oct 2014 13:33
URI: http://epubs.surrey.ac.uk/id/eprint/728515

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