SiGe virtual substrate HMOS transistor for analogue applications
Michelakis, K, Despotopoulos, S, Gaspari, V, Vilches, A, Fobelets, K, Papavassiliou, C, Toumazou, C and Zhang, J (2004) SiGe virtual substrate HMOS transistor for analogue applications Applied Surface Science, 224 (1-4). 386 - 389. ISSN 0169-4332
Available under License : See the attached licence file.
Official URL: http://dx.doi.org/10.1016/j.apsusc.2003.08.065
Silicon-germanium (SiGe) heterojunction metal-oxide-semiconductor field-effect transistors (SiGe HMOSFETs) have been successfully fabricated on Si substrate. The semiconductor heterostructure, which was grown by gas-source molecular beam epitaxy (GS-MBE), was initiated by the deposition of a Si Ge "virtual substrate". The n-type transistors were fabricated using a standard MOS process. The channel is a thin, undoped layer of strained Si and is buried below an arsenic-doped Si Ge layer, which provides the carriers. The devices exhibited excellent current-voltage (I-V) characteristics in terms of transconductance and drain current, with no breakdown or leakage. A level-1 model was extracted, for use in circuit design. The results suggest that the realisation of buried-channel SiGe n-HMOSFETs is feasible in MOS processes. These devices are of particular importance in analogue applications. © 2003 Elsevier B.V. All rights reserved.
|Additional Information:||NOTICE: this is the author’s version of a work that was accepted for publication in Applied Surface Science. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Applied Surface Science, 224(1-4), March 2004, DOI 10.1016/j.apsusc.2003.08.065.|
|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute|
|Deposited By:||Symplectic Elements|
|Deposited On:||17 Oct 2012 11:54|
|Last Modified:||16 Feb 2013 15:13|
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