Monolithic micropower amplifier using SiGe n-MODFET device
Vilches, A, Fobelets, K, Michelakis, K, Despotopoulos, S, Papavassiliou, C, Hackbarth, T and König, U (2003) Monolithic micropower amplifier using SiGe n-MODFET device Electronics Letters, 39 (12). pp. 884-886.
Micropower Amp Letter Final.pdf
Available under License : See the attached licence file.
A micropower-relevant model is extracted from the DC characteristics of an n-type buried channel Si/SiGe hetero-junction modulation doped FET (HMODFET). This model is then used to design a novel monolithic SiGe single-stage class-A power amplifier for micropower operation (sub 500 μW). The amplifier is fabricated and measured data of the power-gain against operating power are presented for the first time.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute|
|Date :||12 June 2003|
|Identification Number :||https://doi.org/10.1049/el:20030581|
|Additional Information :||This paper is a postprint of a paper submitted to and accepted for publication in Electronics Letters and is subject to Institution of Engineering and Technology Copyright. The copy of record is available at IET Digital Library|
|Depositing User :||Symplectic Elements|
|Date Deposited :||17 Oct 2012 10:39|
|Last Modified :||23 Sep 2013 19:41|
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