Monolithic micropower amplifier using SiGe n-MODFET device
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Vilches, A, Fobelets, K, Michelakis, K, Despotopoulos, S, Papavassiliou, C, Hackbarth, T and König, U (2003) Monolithic micropower amplifier using SiGe n-MODFET device Electronics Letters, 39 (12). 884 - 886. ISSN 0013-5194
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Official URL: http://dx.doi.org/10.1049/el:20030581
Abstract
A micropower-relevant model is extracted from the DC characteristics of an n-type buried channel Si/SiGe hetero-junction modulation doped FET (HMODFET). This model is then used to design a novel monolithic SiGe single-stage class-A power amplifier for micropower operation (sub 500 μW). The amplifier is fabricated and measured data of the power-gain against operating power are presented for the first time.
| Item Type: | Article |
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| Additional Information: | This paper is a postprint of a paper submitted to and accepted for publication in Electronics Letters and is subject to Institution of Engineering and Technology Copyright. The copy of record is available at IET Digital Library |
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute |
| ID Code: | 726464 |
| Deposited By: | Symplectic Elements |
| Deposited On: | 17 Oct 2012 11:39 |
| Last Modified: | 16 Feb 2013 15:13 |
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