Monolithic micropower amplifier using SiGe n-MODFET device
Vilches, A, Fobelets, K, Michelakis, K, Despotopoulos, S, Papavassiliou, C, Hackbarth, T and König, U (2003) Monolithic micropower amplifier using SiGe n-MODFET device Electronics Letters, 39 (12). 884 - 886. ISSN 0013-5194
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Official URL: http://dx.doi.org/10.1049/el:20030581
A micropower-relevant model is extracted from the DC characteristics of an n-type buried channel Si/SiGe hetero-junction modulation doped FET (HMODFET). This model is then used to design a novel monolithic SiGe single-stage class-A power amplifier for micropower operation (sub 500 μW). The amplifier is fabricated and measured data of the power-gain against operating power are presented for the first time.
|Additional Information:||This paper is a postprint of a paper submitted to and accepted for publication in Electronics Letters and is subject to Institution of Engineering and Technology Copyright. The copy of record is available at IET Digital Library|
|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute|
|Deposited By:||Symplectic Elements|
|Deposited On:||17 Oct 2012 11:39|
|Last Modified:||16 Feb 2013 15:13|
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