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Monolithic micropower amplifier using SiGe n-MODFET device

Vilches, A, Fobelets, K, Michelakis, K, Despotopoulos, S, Papavassiliou, C, Hackbarth, T and König, U (2003) Monolithic micropower amplifier using SiGe n-MODFET device Electronics Letters, 39 (12). pp. 884-886.

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A micropower-relevant model is extracted from the DC characteristics of an n-type buried channel Si/SiGe hetero-junction modulation doped FET (HMODFET). This model is then used to design a novel monolithic SiGe single-stage class-A power amplifier for micropower operation (sub 500 μW). The amplifier is fabricated and measured data of the power-gain against operating power are presented for the first time.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute
Authors :
Vilches, A
Fobelets, K
Michelakis, K
Despotopoulos, S
Papavassiliou, C
Hackbarth, T
König, U
Date : 12 June 2003
DOI : 10.1049/el:20030581
Additional Information : This paper is a postprint of a paper submitted to and accepted for publication in Electronics Letters and is subject to Institution of Engineering and Technology Copyright. The copy of record is available at IET Digital Library
Depositing User : Symplectic Elements
Date Deposited : 17 Oct 2012 10:39
Last Modified : 31 Oct 2017 14:45

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