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SiGe HMODFET "KAIST" micropower model and amplifier realization

Vilches, A, Fobelets, K, Michelakis, K, Despotopoulos, S, Papavassiliou, C, Hackbarth, T and König, U (2004) SiGe HMODFET "KAIST" micropower model and amplifier realization IEEE Transactions on Circuits and Systems I: Regular Papers, 51 (6). pp. 1100-1105.

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Abstract

The recently published small-signal KAIST model is used successfully to fit the measured RF characteristics of a novel SiGe n-HMODFET device operating at micropower levels and extracted small-signal model parameters for this device under micropower operation are presented here for the first time. This model is then used to predict the performance of a simple micropower amplifier (sub 300-μW total power consumption), realized in SiGe technology, and a comparison of modeled versus measured data is included.

Item Type: Article
Authors :
AuthorsEmailORCID
Vilches, AUNSPECIFIEDUNSPECIFIED
Fobelets, KUNSPECIFIEDUNSPECIFIED
Michelakis, KUNSPECIFIEDUNSPECIFIED
Despotopoulos, SUNSPECIFIEDUNSPECIFIED
Papavassiliou, CUNSPECIFIEDUNSPECIFIED
Hackbarth, TUNSPECIFIEDUNSPECIFIED
König, UUNSPECIFIEDUNSPECIFIED
Date : June 2004
Identification Number : https://doi.org/10.1109/TCSI.2004.829242
Depositing User : Symplectic Elements
Date Deposited : 28 Mar 2017 14:10
Last Modified : 28 Mar 2017 14:10
URI: http://epubs.surrey.ac.uk/id/eprint/726463

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