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Buried-channel SiGe HMODFET device potential for micropower applications

Vilches, A, Fobelets, K, Michelakis, K, Haigh, D, Papavassiliou, C, Hackbath, T and Konig, U (2004) Buried-channel SiGe HMODFET device potential for micropower applications Solid-State Electronics, 48 (8). pp. 1423-1431.

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Abstract

In this paper, intrinsic device parameters, directly extracted from buried-channel n-HMODFET devices biased at micropower supply levels are presented. Sub-threshold region peaks in plots of intrinsic transit frequency and transconductance vs. bias clearly exemplify the devices suitability for RF/micropower applications. Measurements are also presented for a SiGe n-HMODFET inverting amplifier and self-biased dynamic load with a maximum (G ) power gain of 26 dB and corner frequency of 40 MHz recorded for an amplifier device power-drain of just 77 μW and a total power drain of 150 μW. A comparison of gain-efficiency (maximum gain vs. total input power) at micropower (200 mV V) and full power (3 V V) yields 4× greater efficiency at micropower supply levels. © 2004 Elsevier Ltd. All rights reserved.

Item Type: Article
Authors :
NameEmailORCID
Vilches, AUNSPECIFIEDUNSPECIFIED
Fobelets, KUNSPECIFIEDUNSPECIFIED
Michelakis, KUNSPECIFIEDUNSPECIFIED
Haigh, DUNSPECIFIEDUNSPECIFIED
Papavassiliou, CUNSPECIFIEDUNSPECIFIED
Hackbath, TUNSPECIFIEDUNSPECIFIED
Konig, UUNSPECIFIEDUNSPECIFIED
Date : August 2004
Identification Number : 10.1016/j.sse.2004.01.019
Depositing User : Symplectic Elements
Date Deposited : 28 Mar 2017 14:10
Last Modified : 31 Oct 2017 14:51
URI: http://epubs.surrey.ac.uk/id/eprint/726461

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