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SiGe HMOSFET monolithic inverting current mirror

Michelakis, K, Toumazou, C, Despotopoulos, S, Papavassiliou, C, Vilches, A and Fobelets, K (2005) SiGe HMOSFET monolithic inverting current mirror Solid-State Electronics, 49 (4). 591 - 594. ISSN 0038-1101

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Abstract

The authors present the first to their knowledge monolithic inverting current mirror fabricated on heterostructure Si/SiGe technology, using buried silicon channel depletion-mode MOSFET transistors. Characterisation results both at DC and at high frequencies prove that the technology is viable, with the circuit exhibiting remarkably high linearity while combining functionality usually achieved in III-V systems with the robustness and flexibility of a MOS platform. This emerging technology qualifies as an ideal candidate for the building of elemental analogue blocks, where tuning and exploitation of device properties will eliminate the need of further linearisation circuitry, which increases noise, complexity and power consumption. Furthermore, these circuits can also benefit from the high frequency bandwidth associated with strained silicon channels. © 2005 Elsevier Ltd. All rights reserved.

Item Type: Article
Additional Information: NOTICE: this is the author’s version of a work that was accepted for publication in Solid-State Electronics. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Solid-State Electronics, 49(4), April 2005, DOI 10.1016/j.sse.2005.01.016.
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute
Depositing User: Symplectic Elements
Date Deposited: 02 Nov 2012 11:32
Last Modified: 23 Sep 2013 19:41
URI: http://epubs.surrey.ac.uk/id/eprint/726460

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