Solution processable nanowire field-effect transistors
Opoku, C, Shkunov, M, Chen, L and Meyer, F (2011) Solution processable nanowire field-effect transistors Materials Research Society Symposium Proceedings, 1287 . 69 - 74. ISSN 0272-9172
Available under License : See the attached licence file.
Official URL: http://dx.doi.org/10.1557/opl.2011.1437
Hybrid field-effect-transistors (FETs) with germanium nanowire (NW) arrays and organic gate dielectric are presented. The nanowire deposition steps are fully compatible with printed electronics route. NW FETs demonstrate good performance with On/Off ratios of ~10 and hole mobilities of ∼13 cm /Vs in both nitrogen and air atmosphere. These results suggest that the hybrid nanowire FETs could be used in large area inexpensive electronics. © 2011 Materials Research Society.
|Additional Information:||© 2011 Materials Research Society.|
|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre|
|Deposited By:||Symplectic Elements|
|Deposited On:||09 Oct 2012 12:36|
|Last Modified:||11 May 2013 14:39|
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