Effect of dislocations on charge carrier mobility-lifetime product in synthetic single crystal diamond

Lohstroh, A, Sellin, PJ, Wang, SG, Davies, AW, Parkin, J, Martin, RW and Edwards, PR (2007) Effect of dislocations on charge carrier mobility-lifetime product in synthetic single crystal diamond APPLIED PHYSICS LETTERS, 90 (10). ? - ?. ISSN 0003-6951

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Abstract

The authors report correlations between variations in charge transport of electrons and holes in synthetic single crystal diamond and the presence of nitrogen impurities and dislocations. The spatial distribution of these defects was imaged using their characteristic luminescence emission and compared with maps of carrier drift length measured by ion beam induced charge imaging. The images indicate a reduction of electron and hole mobility-lifetime product due to nitrogen impurities and dislocations. Very good charge transport is achieved in selected regions where the dislocation density is minimal. (c) 2007 American Institute of Physics.

Item Type:	Article
Additional Information:	Copyright 2007 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 90 (10) 102111 and may be found at http://link.aip.org/link/?apl/90/102111. A. Lohstroh et al., Appl. Phys.Lett. 90, 102111 (2007)
Uncontrolled Keywords:	Science & Technology, Physical Sciences, Physics, Applied, Physics, CVD DIAMOND, ELECTRICAL-PROPERTIES, DEPOSITED DIAMOND, DETECTORS, RADIATION, FILMS, TRANSPORT, SPECTRA, NUCLEAR, BEAM
Related URLs:	Author
Divisions:	Faculty of Engineering and Physical Sciences > Physics
Depositing User:	Mr Adam Field
Date Deposited:	06 Jul 2012 15:11
Last Modified:	23 Sep 2013 19:33
URI:	http://epubs.surrey.ac.uk/id/eprint/712333

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