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Interfacial studies of Al2O3 deposited on 4H-SiC(0001)

Diplas, S, Avice, M, Thogersen, A, Christensen, JS, Grossner, U, Svensson, BG, Nilsen, O, Fjelivag, H, Hinderc, S and Watts, JF (2008) Interfacial studies of Al2O3 deposited on 4H-SiC(0001) SURFACE AND INTERFACE ANALYSIS, 40 (3-4). 822 - 825. ISSN 0142-2421

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Abstract

Al2O3 films deposited on 4H-SiC(0001) by atomic layer deposition (ALD) were characterized by x-ray photoelectron spectroscopy (XPS), and high resolution transmission electron microscopy (HRTEM). The effect of medium and high temperature (873, 1273 K) annealing on samples with oxide thicknesses of 5-8nm and 100-120nm was studied. XPS indicated presence of a thin (~1nm) SiOx layer on the as-grown samples which increased to ~3 nm after annealing above crystallization temperature (1273 K) in Ar atmosphere. Upon annealing the stoichiometry of the interfacial oxide approaches that of SiO2. HRTEM showed that the thickness of the interfacial oxide formed after annealing at 1273 K was not uniform. No significant increase in the thickness of the interfacial oxide, was observed after annealing at 873 K in a N2 (90%) / H2 (10%) atmosphere.

Item Type: Article
Additional Information: The definitive version is available at http://onlinelibrary.wiley.com/doi/10.1002/sia.2787/abstract
Uncontrolled Keywords: Science & Technology, Physical Sciences, Chemistry, Physical, Chemistry, 4H-SiC, Al2O3, interface, XPS, annealing, SiOx, ATOMIC LAYER DEPOSITION, THIN ALD-AL2O3 FILMS, BEHAVIOR, SILICON, STATES, OZONE, ALD
Related URLs:
Divisions: Faculty of Engineering and Physical Sciences > Mechanical Engineering Sciences
Depositing User: Symplectic Elements
Date Deposited: 11 Jul 2012 16:21
Last Modified: 23 Sep 2013 19:33
URI: http://epubs.surrey.ac.uk/id/eprint/712204

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