Freestanding waveguides in silicon
Yang, PY, Mashanovich, GZ, Gomez-Morilla, I, Headley, WR, Reed, GT, Teo, EJ, Blackwood, DJ, Breese, MBH and Bettiol, AA (2007) Freestanding waveguides in silicon Applied Physics Letters, 90 (24), 241109.
YANG Free standing waveguides in silicon 2007.pdf - Version of Record
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Using a direct-write process for the production of three dimensional microstructures on a semiconductor, freestanding waveguides have been realized in silicon. The waveguides are produced by a focused beam of high energy protons that is scanned over a silicon substrate. The latent image of the scan is subsequently developed by electrochemical etching. Herein the authors report on the fabrication method as well as determining the propagation loss of these structures. Propagation loss values of 13.4 and 14.6 dB/cm were obtained for these preliminary structures for transverse electric and transverse magnetic polarizations, respectively.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics|
|Date :||11 June 2007|
|Identification Number :||https://doi.org/10.1063/1.2749175|
|Depositing User :||Mr Adam Field|
|Date Deposited :||14 Sep 2011 11:12|
|Last Modified :||09 Jun 2014 13:45|
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