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Three-dimensional control of optical waveguide fabrication in silicon

Teo, EJ, Bettiol, AA, Breese, MBH, Yang, P, Mashanovich, GZ, Headley, WR, Reed, GT and Blackwood, DJ (2008) Three-dimensional control of optical waveguide fabrication in silicon OPT EXPRESS, 16 (2). 573 - 578. ISSN 1094-4087

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Abstract

In this paper, we report a direct-write technique for three-dimensional control of waveguide fabrication in silicon. Here, a focused beam of 250 keV protons is used to selectively slow down the rate of porous silicon formation during subsequent anodization, producing a silicon core surrounded by porous silicon cladding. The etch rate is found to depend on the irradiated dose, increasing the size of the core from 2.5 mu m to 3.5 mu m in width, and from 1.5 mu m to 2.6 mu m in height by increasing the dose by an order of magnitude. This ability to accurately control the waveguide profile with the ion dose at high spatial resolution provides a means of producing three-dimensional silicon waveguide tapers. Propagation losses of 6.7 dB/cm for TE and 6.8 dB/cm for TM polarization were measured in linear waveguides at the wavelength of 1550 nm. (C) 2008 Optical Society of America.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Authors :
AuthorsEmail
Teo, EJUNSPECIFIED
Bettiol, AAUNSPECIFIED
Breese, MBHUNSPECIFIED
Yang, PUNSPECIFIED
Mashanovich, GZUNSPECIFIED
Headley, WRUNSPECIFIED
Reed, GTUNSPECIFIED
Blackwood, DJUNSPECIFIED
Date : 21 January 2008
Identification Number : 10.1364/OE.16.000573
Uncontrolled Keywords : POROUS SILICON, ROUGHNESS, TAPERS
Depositing User : Symplectic Elements
Date Deposited : 30 Aug 2011 11:23
Last Modified : 23 Sep 2013 18:44
URI: http://epubs.surrey.ac.uk/id/eprint/7093

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