Free carrier lifetime modification for silicon waveguide based devices

Wright, NM, Thomson, DJ, Litvinenko, KL, Headley, WR, Smith, AJ, Knights, AP, Deane, JHB, Gardes, FY, Mashanovich, GZ, Gwilliam, R et al and Reed, GT (2008) Free carrier lifetime modification for silicon waveguide based devices OPT EXPRESS, 16 (24). pp. 19779-19784.

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Abstract

We investigate the effect of silicon ion irradiation on free carrier lifetime in silicon waveguides, and thus its ability to reduce the density of two-photon-absorption (TPA) generated free carriers. Our experimental results show that free carrier lifetime can be reduced significantly by silicon ion implantation. Associated excess optical absorption from the implanted ions can be reduced to an acceptable level if irradiation energy and dose are correctly chosen. Simulations of Raman scattering suggest that net gain can be achieved in certain cases without the need for an integrated diode in reverse bias to remove the photo-generated free carriers. (c) 2008 Optical Society of America

Item Type:	Article
Divisions :	Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Authors :	Wright, NM, Thomson, DJ, Litvinenko, KL, Headley, WR, Smith, AJ, Knights, AP, Deane, JHB, Gardes, FY, Mashanovich, GZ, Gwilliam, R and Reed, GT
Date :	24 November 2008
DOI :	10.1364/OE.16.019779
Uncontrolled Keywords :	NONLINEAR ABSORPTION, RAMAN AMPLIFICATION, LASER
Depositing User :	Symplectic Elements
Date Deposited :	30 Aug 2011 12:12
Last Modified :	31 Oct 2017 14:08
URI:	http://epubs.surrey.ac.uk/id/eprint/7092

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