Fabrication of low-loss silicon-on-oxidized-porous-silicon strip waveguide using focused proton-beam irradiation
Teo, EJ, Bettiol, AA, Yang, P, Breese, MBH, Xiong, BQ, Mashanovich, GZ, Headley, WR and Reed, GT (2009) Fabrication of low-loss silicon-on-oxidized-porous-silicon strip waveguide using focused proton-beam irradiation OPT LETT, 34 (5). pp. 659-661.
TEO Fabrication of low loss silicon-on-oxidized porous silicon strip waveguides using focused proton beam irradiation 2009.pdf
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we have successfully fabricated low-loss silicon-on-oxidized-porous-silicon (SOPS) strip waveguides with high-index contrast using focused proton-beam irradiation and electrochemical etching. Smooth surface quality with rms roughness of 3.1 nm is achieved for a fluence of 1 x 10(15)/cm(2) after postoxidation treatment. Optical characterization at a wavelength of 1550 nm shows a loss of 1.1 +/- 0.4 dB/cm and 1.2 +/- 0.4 dB/cm in TE and TM polarization respectively, which we believe is the lowest reported loss for SOPS waveguides. This opens up new opportunities for all-silicon-based optoelectronics applications. (C) 2009 Optical Society of America
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics|
|Date :||1 March 2009|
|Identification Number :||https://doi.org/10.1364/OL.34.000659|
|Uncontrolled Keywords :||ROUGHNESS|
|Depositing User :||Symplectic Elements|
|Date Deposited :||30 Aug 2011 12:31|
|Last Modified :||23 Sep 2013 18:44|
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