High contrast 40Gbit/s optical modulation in silicon
Thomson, DJ, Gardes, FY, Hu, Y, Mashanovich, G, Fournier, M, Grosse, P, Fedeli, J-M and Reed, GT (2011) High contrast 40Gbit/s optical modulation in silicon Optics Express, 19 (12). pp. 11507-11516.
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mashanovic_high_contrast.pdf - Accepted version Manuscript
Data interconnects are on the verge of a revolution. Electrical links are increasingly being pushed to their limits with the ever increasing demand for bandwidth. Data transmission in the optical domain is a leading candidate to satisfy this need. The optical modulator is key to most applications and increasing the data rate at which it operates is important for reducing power consumption, increasing channel bandwidth limitations and improving the efficiency of infrastructure usage. In this work silicon based devices of lengths 3.5mm and 1mm operating at 40Gbit/s are demonstrated with extinction ratios of up to 10dB and 3.5dB respectively. The efficiency and optical loss of the phase shifter is 2.7V.cm and 4dB/mm (or 4.5dB/mm including waveguide loss) respectively.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics|
|Identification Number :||https://doi.org/10.1364/OE.19.011507|
|Depositing User :||Symplectic Elements|
|Date Deposited :||31 Aug 2011 12:23|
|Last Modified :||23 Sep 2013 18:44|
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