High contrast 40Gbit/s optical modulation in silicon

Thomson, DJ, Gardes, FY, Hu, Y, Mashanovich, G, Fournier, M, Grosse, P, Fedeli, J-M and Reed, GT (2011) High contrast 40Gbit/s optical modulation in silicon Optics Express, 19 (12). pp. 11507-11516.

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Abstract

Data interconnects are on the verge of a revolution. Electrical links are increasingly being pushed to their limits with the ever increasing demand for bandwidth. Data transmission in the optical domain is a leading candidate to satisfy this need. The optical modulator is key to most applications and increasing the data rate at which it operates is important for reducing power consumption, increasing channel bandwidth limitations and improving the efficiency of infrastructure usage. In this work silicon based devices of lengths 3.5mm and 1mm operating at 40Gbit/s are demonstrated with extinction ratios of up to 10dB and 3.5dB respectively. The efficiency and optical loss of the phase shifter is 2.7V.cm and 4dB/mm (or 4.5dB/mm including waveguide loss) respectively.

Item Type:	Article
Divisions :	Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Authors :	Name Email ORCID Thomson, DJ Gardes, FY Hu, Y Mashanovich, G Fournier, M Grosse, P Fedeli, J-M Reed, GT
Date :	2011
DOI :	10.1364/OE.19.011507
Depositing User :	Symplectic Elements
Date Deposited :	31 Aug 2011 12:23
Last Modified :	31 Oct 2017 14:09
URI:	http://epubs.surrey.ac.uk/id/eprint/7088

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