Laser erasable implanted gratings for integrated silicon photonics
Loiacono, R, Reed, GT, Mashanovich, GZ, Gwilliam, R, Henley, SJ, Hu, YF, Feldesh, R and Jones, R (2011) Laser erasable implanted gratings for integrated silicon photonics Optics Express, 19 (11). pp. 10728-10734.
Renzo OE 2011 - Version of Record
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In this work we experimentally demonstrate laser erasable germanium implanted Bragg gratings in SOI. Bragg gratings are formed in a silicon waveguide by ion implantation induced amorphization, and are subsequently erased by a contained laser thermal treatment process. An extinction ratio up to 24dB has been demonstrated in transmission for the fabricated implanted Bragg gratings with lengths up to 1000 mu m. Results are also presented, demonstrating that the gratings can be selectively removed by UV pulsed laser annealing, enabling a new concept of laser erasable devices for integrated photonics.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics|
|Date :||23 May 2011|
|Identification Number :||https://doi.org/10.1364/OE.19.010728|
|Uncontrolled Keywords :||AMORPHOUS-SILICON, WAVE-GUIDES, FABRICATION|
|Depositing User :||Symplectic Elements|
|Date Deposited :||14 Sep 2011 10:07|
|Last Modified :||09 Jun 2014 13:35|
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