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Laser erasable implanted gratings for integrated silicon photonics

Loiacono, R, Reed, GT, Mashanovich, GZ, Gwilliam, R, Henley, SJ, Hu, YF, Feldesh, R and Jones, R (2011) Laser erasable implanted gratings for integrated silicon photonics Optics Express, 19 (11). pp. 10728-10734.

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Abstract

In this work we experimentally demonstrate laser erasable germanium implanted Bragg gratings in SOI. Bragg gratings are formed in a silicon waveguide by ion implantation induced amorphization, and are subsequently erased by a contained laser thermal treatment process. An extinction ratio up to 24dB has been demonstrated in transmission for the fabricated implanted Bragg gratings with lengths up to 1000 mu m. Results are also presented, demonstrating that the gratings can be selectively removed by UV pulsed laser annealing, enabling a new concept of laser erasable devices for integrated photonics.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Authors :
AuthorsEmailORCID
Loiacono, RUNSPECIFIEDUNSPECIFIED
Reed, GTUNSPECIFIEDUNSPECIFIED
Mashanovich, GZUNSPECIFIEDUNSPECIFIED
Gwilliam, RUNSPECIFIEDUNSPECIFIED
Henley, SJUNSPECIFIEDUNSPECIFIED
Hu, YFUNSPECIFIEDUNSPECIFIED
Feldesh, RUNSPECIFIEDUNSPECIFIED
Jones, RUNSPECIFIEDUNSPECIFIED
Date : 23 May 2011
Identification Number : 10.1364/OE.19.010728
Uncontrolled Keywords : AMORPHOUS-SILICON, WAVE-GUIDES, FABRICATION
Depositing User : Symplectic Elements
Date Deposited : 14 Sep 2011 10:07
Last Modified : 09 Jun 2014 13:35
URI: http://epubs.surrey.ac.uk/id/eprint/7086

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