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Use of an asymmetric pulse profile for higher crystalline volumes from excimer laser crystallization of amorphous silicon

Adikaari, AADT, Mudugamuwa, NK and Silva, SRP (2007) Use of an asymmetric pulse profile for higher crystalline volumes from excimer laser crystallization of amorphous silicon APPLIED PHYSICS LETTERS, 90 (17). ? - ?. ISSN 0003-6951

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Abstract

An excimer laser is used to crystallize amorphous silicon on glass to nanocrystalline silicon, yielding higher crystalline volumes than reported earlier, by modifying the laser pulse profile used for crystallization at a given energy density. An asymmetric, shorter pulse profile, as opposed to the conventional Gaussian profile retains the desirable gradual leading edge of the Gaussian pulse for controlled evolution of hydrogen, while increasing the peak energy. The resultant films show an increased surface roughness along with higher crystalline volumes, which may be beneficial for photovoltaics and electron field emission cold cathodes.

Item Type: Article
Uncontrolled Keywords: Science & Technology, Physical Sciences, Physics, Applied, Physics, THIN-FILM TRANSISTORS, POLYCRYSTALLINE SILICON
Related URLs:
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre
Depositing User: Mr Adam Field
Date Deposited: 27 May 2010 14:05
Last Modified: 23 Sep 2013 18:25
URI: http://epubs.surrey.ac.uk/id/eprint/66

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