A study of timing properties of Silicon Photomultipliers
Avella, P, De Santo, A, Lohstroh, A, Sajjad, MT and Sellin, PJ (2012) A study of timing properties of Silicon Photomultipliers Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 695. pp. 257-260. ISSN 0168-9002
NDIP11_paper_v14thNov2011.pdf - Accepted Version
Available under License : See the attached licence file.
Silicon Photomultipliers (SiPM) are solid-state pixelated photodetectors. Lately these sensors have been investigated for Time of Flight Positron Emission Tomography (ToF-PET) applications, where very good coincidence time resolution of the order of hundreds of picoseconds imply spatial resolution of the order of cm in the image reconstruction. The very fast rise time typical of the avalanche discharge improves the time resolution, but can be limited by the readout electronics and the technology used to construct the device. In this work the parameters of the equivalent circuit of the device that directly affect the pulse shape, namely the quenching resistance and capacitance and the diode and parasitic capacitances, were calculated. The mean rise time obtained with different preamplifiers was also measured.
|Additional Information:||NOTICE: this is the author’s version of a work that was accepted for publication in Nuclear Instruments and Methods in Physics Research A. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Nuclear Instruments and Methods in Physics Research A, November 2011, DOI 10.1016/j.nima.2011.11.049.|
|Divisions:||Faculty of Engineering and Physical Sciences > Physics|
|Depositing User:||Symplectic Elements|
|Date Deposited:||14 Jun 2012 10:30|
|Last Modified:||05 Feb 2014 19:01|
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