Long wavelength bulk GaInNAs p-i-n photodiodes lattice matched to GaAs
Ng, JS, Soong, WM, Steer, MJ, Hopkinson, M, David, JPR, Chamings, J, Sweeney, SJ and Adams, AR (2007) Long wavelength bulk GaInNAs p-i-n photodiodes lattice matched to GaAs JOURNAL OF APPLIED PHYSICS, 101 (6), ARTN 0.
We report bulk GaInNAs p-i-n photodiodes lattice-matched to GaAs substrates, grown by solid source molecular beam epitaxy with photoresponses out to similar to 1.3 mu m. The as-grown samples were characterized optically, structurally, and electrically. A low background doping concentration in the range of 10(14)-10(15) cm(-3) was obtained in the samples. One of the samples with a 0.5 mu m thick GaInNAs absorbing layer gave a responsivity of 0.11 A/W for a band edge of 1.28 mu m at reverse bias of 2 V.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics|
|Date :||15 March 2007|
|Identification Number :||https://doi.org/10.1063/1.2709622|
|Uncontrolled Keywords :||Science & Technology, Physical Sciences, Physics, Applied, Physics, MOLECULAR-BEAM EPITAXY, 1.3 MU-M, GROWTH, TEMPERATURE|
|Related URLs :|
|Depositing User :||Mr Adam Field|
|Date Deposited :||27 May 2010 14:05|
|Last Modified :||23 Sep 2013 18:25|
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