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Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing

Sharp, JA, Smith, AJ, Webb, RP, Kirkby, KJ, Cowern, NEB, Giubertoni, D, Gennaro, S, Bersani, M, Foad, MA, Fazzini, PF and Cristiano, F (2008) Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing APPL PHYS LETT, 92 (8). ISSN 0003-6951

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Abstract

The effects of surface proximity and B concentration on end-of-range defect formation during nonmelt laser annealing in preamorphized silicon have been studied. These effects were analyzed by observing the activation and diffusion of an ultrashallow B implant, using Hall effect and secondary ion mass spectrometry measurements. By adjusting the preamorphizing implant and laser annealing conditions, B deactivation and diffusion were minimized, resulting in a sheet resistance of similar to 600 Omega/sq with a 16 nm junction depth. This is attributed to a combination of enhanced dissolution of end-of-range defects and preferential formation of B-interstitial clusters due to the surface proximity and high B concentration, respectively.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre
Authors :
AuthorsEmail
Sharp, JAUNSPECIFIED
Smith, AJUNSPECIFIED
Webb, RPUNSPECIFIED
Kirkby, KJUNSPECIFIED
Cowern, NEBUNSPECIFIED
Giubertoni, DUNSPECIFIED
Gennaro, SUNSPECIFIED
Bersani, MUNSPECIFIED
Foad, MAUNSPECIFIED
Fazzini, PFUNSPECIFIED
Cristiano, FUNSPECIFIED
Date : 25 February 2008
Identification Number : 10.1063/1.2885091
Uncontrolled Keywords : SILICON, IMPLANTS, DEACTIVATION, ACTIVATION, DIFFUSION, JUNCTIONS
Depositing User : Mr Adam Field
Date Deposited : 27 May 2010 14:05
Last Modified : 23 Sep 2013 18:25
URI: http://epubs.surrey.ac.uk/id/eprint/56

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