Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing
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Sharp, JA, Smith, AJ, Webb, RP, Kirkby, KJ, Cowern, NEB, Giubertoni, D, Gennaro, S, Bersani, M, Foad, MA, Fazzini, PF and Cristiano, F (2008) Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing APPL PHYS LETT, 92 (8). ISSN 0003-6951
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Abstract
The effects of surface proximity and B concentration on end-of-range defect formation during nonmelt laser annealing in preamorphized silicon have been studied. These effects were analyzed by observing the activation and diffusion of an ultrashallow B implant, using Hall effect and secondary ion mass spectrometry measurements. By adjusting the preamorphizing implant and laser annealing conditions, B deactivation and diffusion were minimized, resulting in a sheet resistance of similar to 600 Omega/sq with a 16 nm junction depth. This is attributed to a combination of enhanced dissolution of end-of-range defects and preferential formation of B-interstitial clusters due to the surface proximity and high B concentration, respectively.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | SILICON, IMPLANTS, DEACTIVATION, ACTIVATION, DIFFUSION, JUNCTIONS |
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre |
| ID Code: | 56 |
| Deposited By: | Mr Adam Field |
| Deposited On: | 27 May 2010 15:05 |
| Last Modified: | 19 Jun 2013 10:20 |
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