Bismide-alloys for higher efficiency infrared semiconductor lasers

Sweeney, SJ (2010) Bismide-alloys for higher efficiency infrared semiconductor lasers 22nd IEEE International Semiconductor Laser Conference. pp. 111-112.

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Abstract

The incorporation of Bismuth in III-V alloys, such as GaAsBi/GaAs provides a preferential semiconductor band structure to suppress non-radiative recombination and optical losses, improving the efficiency and temperature stability of infrared semiconductor lasers.

Item Type:	Article
Authors :	Name Email ORCID Sweeney, SJ
Date :	2010
DOI :	10.1109/ISLC.2010.5642728
Contributors :	Contribution Name Email ORCID http://www.loc.gov/loc.terms/relators/PBL IEEE,
Depositing User :	Symplectic Elements
Date Deposited :	28 Mar 2017 14:42
Last Modified :	31 Oct 2017 14:34
URI:	http://epubs.surrey.ac.uk/id/eprint/531976

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