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Bismide-alloys for higher efficiency infrared semiconductor lasers

Sweeney, SJ (2010) Bismide-alloys for higher efficiency infrared semiconductor lasers 22nd IEEE International Semiconductor Laser Conference. pp. 111-112.

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Abstract

The incorporation of Bismuth in III-V alloys, such as GaAsBi/GaAs provides a preferential semiconductor band structure to suppress non-radiative recombination and optical losses, improving the efficiency and temperature stability of infrared semiconductor lasers.

Item Type: Article
Authors :
NameEmailORCID
Sweeney, SJUNSPECIFIEDUNSPECIFIED
Date : 2010
Identification Number : 10.1109/ISLC.2010.5642728
Contributors :
ContributionNameEmailORCID
http://www.loc.gov/loc.terms/relators/PBLIEEE, UNSPECIFIEDUNSPECIFIED
Depositing User : Symplectic Elements
Date Deposited : 28 Mar 2017 14:42
Last Modified : 31 Oct 2017 14:34
URI: http://epubs.surrey.ac.uk/id/eprint/531976

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