Bismide-alloys for higher efficiency infrared semiconductor lasers
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Sweeney, SJ (2010) Bismide-alloys for higher efficiency infrared semiconductor lasers 22nd IEEE International Semiconductor Laser Conference. pp. 111-112.
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ISLC 2010 Bi-alloys P24.pdf Restricted to Repository staff only Available under License : See the attached licence file. Download (169kB) |
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Abstract
The incorporation of Bismuth in III-V alloys, such as GaAsBi/GaAs provides a preferential semiconductor band structure to suppress non-radiative recombination and optical losses, improving the efficiency and temperature stability of infrared semiconductor lasers.
Item Type: | Article | ||||||||
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Date : | 2010 | ||||||||
DOI : | 10.1109/ISLC.2010.5642728 | ||||||||
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Depositing User : | Symplectic Elements | ||||||||
Date Deposited : | 28 Mar 2017 14:42 | ||||||||
Last Modified : | 31 Oct 2017 14:34 | ||||||||
URI: | http://epubs.surrey.ac.uk/id/eprint/531976 |
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