An accurate determination of the electronic transitions of InAs/InGaAs/InP quantum dots for midinfrared lasers using simultaneous complementary spectroscopic techniques
Sharma, TK, Hosea, TJC, Sweeney, SJ and Tang, X (2008) An accurate determination of the electronic transitions of InAs/InGaAs/InP quantum dots for midinfrared lasers using simultaneous complementary spectroscopic techniques JOURNAL OF APPLIED PHYSICS, 104 (8), ARTN 0.
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|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics|
|Date :||15 October 2008|
|Identification Number :||https://doi.org/10.1063/1.3005903|
|Uncontrolled Keywords :||Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, SURFACE PHOTOVOLTAGE SPECTROSCOPY, TEMPERATURE-DEPENDENCE, PHOTOREFLECTANCE SPECTROSCOPY, MU-M, PHOTOLUMINESCENCE, SEMICONDUCTORS, PARAMETERS, ALLOYS, GAAS, WELL|
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|Additional Information :||
Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
The following article appeared in Journal of Applied Physics, 104(8) 083109 and may be found at T. K. Sharma et al., J. Appl. Phys. 104, 083109 (2008)
|Depositing User :||Mr Adam Field|
|Date Deposited :||02 May 2012 13:00|
|Last Modified :||23 May 2015 13:35|
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