An accurate determination of the electronic transitions of InAs/InGaAs/InP quantum dots for midinfrared lasers using simultaneous complementary spectroscopic techniques
Sharma, TK, Hosea, TJC, Sweeney, SJ and Tang, X (2008) An accurate determination of the electronic transitions of InAs/InGaAs/InP quantum dots for midinfrared lasers using simultaneous complementary spectroscopic techniques JOURNAL OF APPLIED PHYSICS, 104 (8). ? - ?. ISSN 0021-8979
fulltext.pdf - Published Version
Available under License : See the attached licence file.
InAs/InGaAs/InP quantum dots (QDs) emitting at similar to 2 mu m for midinfrared laser applications are studied using the complementary spectroscopic techniques of photoluminescence (PL), photoreflectance (PR), and surface photovoltage spectroscopy (SPS). We use a procedure that ensures that the same sample spot is studied virtually simultaneously by these three different spectroscopic techniques under almost identical conditions. We are able to measure the ground and excited states transitions of the InAs QDs without any ambiguity, thus providing a complete and clear understanding of the electronic transitions. Temperature dependent PL, SPS, and PR measurements provide a systematic thermal evolution of the ground and excited states. However, the QD transitions are not all seen together at any given temperature in either the PL or SPS measurements. By contrast, the PR technique can measure the complete set of ground and two excited state QD transitions and also the InGaAs barrier energy at all studied temperatures.
Copyright 2008 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
The following article appeared in Journal of Applied Physics, 104(8) 083109 and may be found at T. K. Sharma et al., J. Appl. Phys. 104, 083109 (2008)
|Uncontrolled Keywords:||Science & Technology, Physical Sciences, Physics, Applied, Physics, SURFACE PHOTOVOLTAGE SPECTROSCOPY, TEMPERATURE-DEPENDENCE, PHOTOREFLECTANCE SPECTROSCOPY, MU-M, PHOTOLUMINESCENCE, SEMICONDUCTORS, PARAMETERS, ALLOYS, GAAS, WELL|
|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics|
|Depositing User:||Mr Adam Field|
|Date Deposited:||02 May 2012 13:00|
|Last Modified:||23 Sep 2013 19:25|
Actions (login required)
Downloads per month over past year