Intrinsic limitations of p-doped and undoped 1.3 μm InAs/GaAs quantum dot lasers
Massé, NF, Sweeney, SJ, Marko, IP, Andreev, AD, Adams, AR, Hatori, N and Sugawara, M (2006) Intrinsic limitations of p-doped and undoped 1.3 μm InAs/GaAs quantum dot lasers In: ISLC 2006, 2006-09-17 - 2006-09-21, Hawaii, USA.
Available under License : See the attached licence file.
Official URL: http://dx.doi.org/10.1109/ISLC.2006.1708127
The temperature dependencies of the recombination and gain processes reveal intrinsic limitations on the performances of quantum dot lasers. Controlling the transport of the carriers using the inhomogeneous broadening makes temperature stable threshold current possible.
|Item Type:||Conference or Workshop Item (Paper)|
|Additional Information:||Copyright 2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.|
|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics|
|Deposited By:||Symplectic Elements|
|Deposited On:||12 Jul 2012 13:00|
|Last Modified:||29 Apr 2013 14:34|
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