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Intrinsic limitations of p-doped and undoped 1.3 μm InAs/GaAs quantum dot lasers

Massé, NF, Sweeney, SJ, Marko, IP, Andreev, AD, Adams, AR, Hatori, N and Sugawara, M (2006) Intrinsic limitations of p-doped and undoped 1.3 μm InAs/GaAs quantum dot lasers In: ISLC 2006, 2006-09-17 - 2006-09-21, Hawaii, USA.

Abstract ISLC 2006 Masse-et-al.pdf
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The temperature dependencies of the recombination and gain processes reveal intrinsic limitations on the performances of quantum dot lasers. Controlling the transport of the carriers using the inhomogeneous broadening makes temperature stable threshold current possible

Item Type: Conference or Workshop Item (Conference Paper)
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Authors :
Massé, NF
Sweeney, SJ
Marko, IP
Andreev, AD
Adams, AR
Hatori, N
Sugawara, M
Date : 2006
DOI : 10.1109/ISLC.2006.1708127
Contributors :
Additional Information : Copyright 2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Depositing User : Symplectic Elements
Date Deposited : 12 Jul 2012 12:00
Last Modified : 31 Oct 2017 14:34

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