Temperature dependence of the gain in p-doped and intrinsic 1.3 mu m InAs/GaAs quantum dot lasers
Tools
Masse, NF, Sweeney, SJ, Marko, IP, Adams, AR, Hatori, N and Sugawara, M (2006) Temperature dependence of the gain in p-doped and intrinsic 1.3 mu m InAs/GaAs quantum dot lasers APPLIED PHYSICS LETTERS, 89 (19), ARTN 1.
![]()
|
Text
fulltext.pdf - Version of Record Available under License : See the attached licence file. Download (191kB) |
|
![]()
|
Text (licence)
SRI_deposit_agreement.pdf Download (33kB) |
Official URL: http://dx.doi.org/10.1063/1.2387114
Item Type: | Article |
---|---|
Divisions : | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics |
Authors : | Masse, NF, Sweeney, SJ, Marko, IP, Adams, AR, Hatori, N and Sugawara, M |
Date : | 6 November 2006 |
DOI : | 10.1063/1.2387114 |
Uncontrolled Keywords : | Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, DENSITY-OF-STATES, MODULATION |
Related URLs : | |
Additional Information : |
Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 89 (19) 191118 and may be found at N. F. Masse et al., Appl. Phys.Lett. 89, 191118 (2006) |
Depositing User : | Mr Adam Field |
Date Deposited : | 02 May 2012 12:53 |
Last Modified : | 06 Jul 2019 05:10 |
URI: | http://epubs.surrey.ac.uk/id/eprint/531963 |
Actions (login required)
![]() |
View Item |
Downloads
Downloads per month over past year