Temperature dependence of the gain in p-doped and intrinsic 1.3 mu m InAs/GaAs quantum dot lasers
Masse, NF, Sweeney, SJ, Marko, IP, Adams, AR, Hatori, N and Sugawara, M (2006) Temperature dependence of the gain in p-doped and intrinsic 1.3 mu m InAs/GaAs quantum dot lasers APPLIED PHYSICS LETTERS, 89 (19), ARTN 1.
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|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics|
|Date :||6 November 2006|
|Identification Number :||https://doi.org/10.1063/1.2387114|
|Uncontrolled Keywords :||Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, DENSITY-OF-STATES, MODULATION|
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|Additional Information :||
Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
The following article appeared in Applied Physics Letters, 89 (19) 191118 and may be found at N. F. Masse et al., Appl. Phys.Lett. 89, 191118 (2006)
|Depositing User :||Mr Adam Field|
|Date Deposited :||02 May 2012 12:53|
|Last Modified :||17 Jun 2015 13:33|
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