Temperature dependence of the gain in p-doped and intrinsic 1.3 mu m InAs/GaAs quantum dot lasers
Masse, NF, Sweeney, SJ, Marko, IP, Adams, AR, Hatori, N and Sugawara, M (2006) Temperature dependence of the gain in p-doped and intrinsic 1.3 mu m InAs/GaAs quantum dot lasers APPLIED PHYSICS LETTERS, 89 (19). ? - ?. ISSN 0003-6951
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Official URL: http://dx.doi.org/10.1063/1.2387114
The gain of p-doped and intrinsic InAs/GaAs quantum dot lasers is studied at room temperature and at 350 K. Our results show that, although one would theoretically expect a higher gain for a fixed carrier density in p-doped devices, due to the wider nonthermal distribution of carriers amongst the dots at T=293 K, the peak net gain of the p-doped lasers is actually less at low injection than that of the undoped devices. However, at higher current densities, p doping reduces the effect of gain saturation and therefore allows ground-state lasing in shorter cavities and at higher temperatures.
Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.
The following article appeared in Applied Physics Letters, 89 (19) 191118 and may be found at N. F. Masse et al., Appl. Phys.Lett. 89, 191118 (2006)
|Uncontrolled Keywords:||Science & Technology, Physical Sciences, Physics, Applied, Physics, DENSITY-OF-STATES, MODULATION|
|Divisions:||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics|
|Deposited By:||Mr Adam Field|
|Deposited On:||02 May 2012 13:53|
|Last Modified:||13 Jun 2013 02:58|
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