Temperature dependence of the gain in p-doped and intrinsic 1.3 mu m InAs/GaAs quantum dot lasers

Masse, NF, Sweeney, SJ, Marko, IP, Adams, AR, Hatori, N and Sugawara, M (2006) Temperature dependence of the gain in p-doped and intrinsic 1.3 mu m InAs/GaAs quantum dot lasers APPLIED PHYSICS LETTERS, 89 (19), ARTN 1.

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Item Type:	Article
Divisions :	Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Authors :	Masse, NF, Sweeney, SJ, Marko, IP, Adams, AR, Hatori, N and Sugawara, M
Date :	6 November 2006
DOI :	10.1063/1.2387114
Uncontrolled Keywords :	Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, DENSITY-OF-STATES, MODULATION
Related URLs :	Author
Additional Information :	Copyright 2006 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 89 (19) 191118 and may be found at N. F. Masse et al., Appl. Phys.Lett. 89, 191118 (2006)
Depositing User :	Mr Adam Field
Date Deposited :	02 May 2012 12:53
Last Modified :	06 Jul 2019 05:10
URI:	http://epubs.surrey.ac.uk/id/eprint/531963

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