Modulation of the absorption coefficient at 1.3 mu m in Ge/SiGe multiple quantum well heterostructures on silicon
Lever, L, Hu, Y, Myronov, M, Liu, X, Owens, N, Gardes, FY, Marko, IP, Sweeney, SJ, Ikonic, Z, Leadley, DR, Reed, GT and Kelsall, RW (2011) Modulation of the absorption coefficient at 1.3 mu m in Ge/SiGe multiple quantum well heterostructures on silicon OPTICS LETTERS, 36 (21). pp. 4158-4160.
optics letters v36 n21 Lever 2011.pdf
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We report modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon via the quantum-confined Stark effect. Strain engineering was exploited to increase the direct optical bandgap in the Ge quantum wells. We grew 9 nm-thick Ge quantum wells on a relaxed Si0.22Ge0.78 buffer and a contrast in the absorption coefficient of a factor of greater than 3.2 was achieved in the spectral range 1290–1315 nm.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics|
|Date :||1 November 2011|
|Identification Number :||10.1364/OL.36.004158|
|Related URLs :|
|Additional Information :||This paper was published in Optics Letters and is made available as an electronic reprint with the permission of OSA. The paper can be found at the following URL on the OSA website: http://dx.doi.org/10.1364/OL.36.004158. Systematic or multiple reproduction or distribution to multiple locations via electronic or other means is prohibited and is subject to penalties under law.|
|Depositing User :||Symplectic Elements|
|Date Deposited :||21 Jun 2012 14:27|
|Last Modified :||23 Sep 2013 19:25|
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