Modulation of the absorption coefficient at 1.3 mu m in Ge/SiGe multiple quantum well heterostructures on silicon
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Lever, L, Hu, Y, Myronov, M, Liu, X, Owens, N, Gardes, FY, Marko, IP, Sweeney, SJ, Ikonic, Z, Leadley, DR, Reed, GT and Kelsall, RW (2011) Modulation of the absorption coefficient at 1.3 mu m in Ge/SiGe multiple quantum well heterostructures on silicon OPTICS LETTERS, 36 (21). 4158 - 4160. ISSN 0146-9592
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Official URL: http://dx.doi.org/10.1364/OL.36.004158
Abstract
We report modulation of the absorption coefficient at 1.3 μm in Ge/SiGe multiple quantum well heterostructures on silicon via the quantum-confined Stark effect. Strain engineering was exploited to increase the direct optical bandgap in the Ge quantum wells. We grew 9 nm-thick Ge quantum wells on a relaxed Si0.22Ge0.78 buffer and a contrast in the absorption coefficient of a factor of greater than 3.2 was achieved in the spectral range 1290–1315 nm.
| Item Type: | Article |
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| Additional Information: | This paper was published in Optics Letters and is made available as an electronic reprint with the permission of OSA. The paper can be found at the following URL on the OSA website: http://dx.doi.org/10.1364/OL.36.004158. Systematic or multiple reproduction or distribution to multiple locations via electronic or other means is prohibited and is subject to penalties under law. |
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics |
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| ID Code: | 531961 |
| Deposited By: | Symplectic Elements |
| Deposited On: | 21 Jun 2012 15:27 |
| Last Modified: | 13 Jun 2013 02:57 |
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