Recombination mechanisms and band alignment of GaAs1-xBix/GaAs light emitting diodes
Hossain, N, Marko, IP, Jin, SR, Hild, K, Sweeney, SJ, Lewis, RB, Beaton, DA and Tiedje, T (2012) Recombination mechanisms and band alignment of GaAs1-xBix/GaAs light emitting diodes APPLIED PHYSICS LETTERS, 100 (5), ARTN 0.
Available under License : See the attached licence file.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics|
|Date :||30 January 2012|
|Identification Number :||https://doi.org/10.1063/1.3681139|
|Uncontrolled Keywords :||Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, MOLECULAR-BEAM EPITAXY|
|Related URLs :|
|Additional Information :||Copyright 2012 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters, 100 (5) 051105 and may be found at http://dx.doi.org/10.1063/1.3681139.|
|Depositing User :||Symplectic Elements|
|Date Deposited :||21 Jun 2012 14:08|
|Last Modified :||05 Jul 2015 01:34|
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