Deployment of titanium thermal barrier for low-temperature carbon nanotube growth
Chen, GY, Poa, CHP, Henley, SJ, Stolojan, V, Silva, SRP and Haq, S (2005) Deployment of titanium thermal barrier for low-temperature carbon nanotube growth APPLIED PHYSICS LETTERS, 87 (25), ARTN 2.
Chemical vapor-synthesized carbon nanotubes are typically grown at temperatures around 600 degrees C. We report on the deployment of a titanium layer to help elevate the constraints on the substrate temperature during plasma-assisted growth. The growth is possible through the lowering of the hydrocarbon content used in the deposition, with the only source of heat provided by the plasma. The nanotubes synthesized have a small diameter distribution, which deviates from the usual trend that the diameter is determined by the thickness of the catalyst film. Simple thermodynamic simulations also show that the quantity of heat, that can be distributed, is determined by the thickness of the titanium layer. Despite the lower synthesis temperature, it is shown that this technique allows for high growth rates as well as better quality nanotubes.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre|
|Date :||19 December 2005|
|Identification Number :||https://doi.org/10.1063/1.2150587|
|Uncontrolled Keywords :||Science & Technology, Physical Sciences, Physics, Applied, Physics, ROOM-TEMPERATURE, ELECTRODES|
|Related URLs :|
|Depositing User :||Mr Adam Field|
|Date Deposited :||27 May 2010 14:05|
|Last Modified :||23 Sep 2013 18:25|
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