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InSb/AlInSb Quantum-Well Light-Emitting Diodes

Nash, G R, Haigh, M K, Hardaway, H R, Buckle, L, Andreev, A D, Gordon, N T, Smith, S J, Emeny, M T and Ashley, T (2006) InSb/AlInSb Quantum-Well Light-Emitting Diodes Applied Physics Letters, 88 (5).

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Abstract

We have investigated the room-temperature electroluminescent properties of InSb/AlxIn1-xSb quantum-well light-emitting diodes. The maximum emission from diodes containing quantum wells occurred at significantly higher energies than the band gap of InSb. Close agreement between experimental and theoretical data confirms that recombination occurs within the quantum well.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Physics
Authors :
AuthorsEmailORCID
Nash, G RUNSPECIFIEDUNSPECIFIED
Haigh, M KUNSPECIFIEDUNSPECIFIED
Hardaway, H RUNSPECIFIEDUNSPECIFIED
Buckle, LUNSPECIFIEDUNSPECIFIED
Andreev, A Da.andreev@surrey.ac.ukUNSPECIFIED
Gordon, N TUNSPECIFIEDUNSPECIFIED
Smith, S JUNSPECIFIEDUNSPECIFIED
Emeny, M TUNSPECIFIEDUNSPECIFIED
Ashley, TUNSPECIFIEDUNSPECIFIED
Date : 1 January 2006
Identification Number : 10.1063/1.2171647
Additional Information : Published in <i>Applied Physics Letters,</i> Vol. 88, Iss.5. Copyright 2006 American Institute of Physics. Click <a href=http://apl.aip.org/>here</a> to access the journal's website.
Depositing User : Mr Adam Field
Date Deposited : 27 May 2010 14:05
Last Modified : 23 Sep 2013 18:25
URI: http://epubs.surrey.ac.uk/id/eprint/52

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