InSb/AlInSb Quantum-Well Light-Emitting Diodes
Nash, G R, Haigh, M K, Hardaway, H R, Buckle, L, Andreev, A D, Gordon, N T, Smith, S J, Emeny, M T and Ashley, T (2006) InSb/AlInSb Quantum-Well Light-Emitting Diodes Applied Physics Letters, 88 (5).
We have investigated the room-temperature electroluminescent properties of InSb/AlxIn1-xSb quantum-well light-emitting diodes. The maximum emission from diodes containing quantum wells occurred at significantly higher energies than the band gap of InSb. Close agreement between experimental and theoretical data confirms that recombination occurs within the quantum well.
|Divisions :||Faculty of Engineering and Physical Sciences > Physics|
|Date :||1 January 2006|
|Identification Number :||10.1063/1.2171647|
|Additional Information :||Published in <i>Applied Physics Letters,</i> Vol. 88, Iss.5. Copyright 2006 American Institute of Physics. Click <a href=http://apl.aip.org/>here</a> to access the journal's website.|
|Depositing User :||Mr Adam Field|
|Date Deposited :||27 May 2010 14:05|
|Last Modified :||23 Sep 2013 18:25|
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