Electric field distributions in CdZnTe due to reduced temperature and x-ray irradiation
Sellin, PJ, Prekas, G, Franc, J and Grill, R (2010) Electric field distributions in CdZnTe due to reduced temperature and x-ray irradiation APPLIED PHYSICS LETTERS, 96 (13). ? - ?. ISSN 0003-6951
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Real-time Pockels imaging is performed on semi-insulating CdZnTe to measure the electric field profile in the material bulk. In steady-state room temperature conditions the measured electric field profile is uniform, consistent with a low space charge concentration. At temperatures < 270 K a significant nonuniform electric field profile is observed, which we explain in terms of temperature-induced band bending at the metal-semiconductor interface, causing the formation of positive space charge in the bulk. Similar electric field distortion effects are observed when room temperature CdZnTe is irradiated by x-rays, causing a high rate of photoinduced charge injection.
|Uncontrolled Keywords:||Science & Technology, Physical Sciences, Physics, Applied, Physics, cadmium compounds, charge injection, distortion, II-VI semiconductors, Pockels effect, semiconductor-metal boundaries, space charge, wide band gap semiconductors, X-ray effects, zinc compounds, TRANSPORT-PROPERTIES, DETECTORS, TELLURIDE|
|Divisions:||Faculty of Engineering and Physical Sciences > Physics|
|Depositing User:||Symplectic Elements|
|Date Deposited:||22 Jul 2011 10:32|
|Last Modified:||08 Nov 2013 12:08|
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