Electric field distributions in CdZnTe due to reduced temperature and x-ray irradiation
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Sellin, PJ, Prekas, G, Franc, J and Grill, R (2010) Electric field distributions in CdZnTe due to reduced temperature and x-ray irradiation APPLIED PHYSICS LETTERS, 96 (13). ? - ?. ISSN 0003-6951
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Official URL: http://dx.doi.org/10.1063/1.3373526
Abstract
Real-time Pockels imaging is performed on semi-insulating CdZnTe to measure the electric field profile in the material bulk. In steady-state room temperature conditions the measured electric field profile is uniform, consistent with a low space charge concentration. At temperatures < 270 K a significant nonuniform electric field profile is observed, which we explain in terms of temperature-induced band bending at the metal-semiconductor interface, causing the formation of positive space charge in the bulk. Similar electric field distortion effects are observed when room temperature CdZnTe is irradiated by x-rays, causing a high rate of photoinduced charge injection.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Science & Technology, Physical Sciences, Physics, Applied, Physics, cadmium compounds, charge injection, distortion, II-VI semiconductors, Pockels effect, semiconductor-metal boundaries, space charge, wide band gap semiconductors, X-ray effects, zinc compounds, TRANSPORT-PROPERTIES, DETECTORS, TELLURIDE |
| Divisions: | Faculty of Engineering and Physical Sciences > Physics |
| Related URLs: | |
| ID Code: | 5161 |
| Deposited By: | Symplectic Elements |
| Deposited On: | 22 Jul 2011 11:32 |
| Last Modified: | 27 Apr 2013 14:34 |
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