Temperature dependence of the gain in p-doped and intrinsic 1.3 mu m InAs/GaAs quantum dot lasers
Masse, NF, Sweeney, SJ, Marko, IP, Adams, AR, Hatori, N and Sugawara, M (2006) Temperature dependence of the gain in p-doped and intrinsic 1.3 mu m InAs/GaAs quantum dot lasers APPL PHYS LETT, 89 (19), 191118.
The gain of p-doped and intrinsic InAs/GaAs quantum dot lasers is studied at room temperature and at 350 K. Our results show that, although one would theoretically expect a higher gain for a fixed carrier density in p-doped devices, due to the wider nonthermal distribution of carriers amongst the dots at T=293 K, the peak net gain of the p-doped lasers is actually less at low injection than that of the undoped devices. However, at higher current densities, p doping reduces the effect of gain saturation and therefore allows ground-state lasing in shorter cavities and at higher temperatures.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics|
|Date :||6 November 2006|
|Identification Number :||https://doi.org/10.1063/1.2387114|
|Uncontrolled Keywords :||DENSITY-OF-STATES, MODULATION|
|Depositing User :||Mr Adam Field|
|Date Deposited :||27 May 2010 14:09|
|Last Modified :||23 Sep 2013 18:28|
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