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Temperature dependence of the gain in p-doped and intrinsic 1.3 mu m InAs/GaAs quantum dot lasers

Masse, NF, Sweeney, SJ, Marko, IP, Adams, AR, Hatori, N and Sugawara, M (2006) Temperature dependence of the gain in p-doped and intrinsic 1.3 mu m InAs/GaAs quantum dot lasers APPL PHYS LETT, 89 (19). ? - ?. ISSN 0003-6951

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Abstract

The gain of p-doped and intrinsic InAs/GaAs quantum dot lasers is studied at room temperature and at 350 K. Our results show that, although one would theoretically expect a higher gain for a fixed carrier density in p-doped devices, due to the wider nonthermal distribution of carriers amongst the dots at T=293 K, the peak net gain of the p-doped lasers is actually less at low injection than that of the undoped devices. However, at higher current densities, p doping reduces the effect of gain saturation and therefore allows ground-state lasing in shorter cavities and at higher temperatures.

Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Authors :
AuthorsEmail
Masse, NFUNSPECIFIED
Sweeney, SJUNSPECIFIED
Marko, IPUNSPECIFIED
Adams, ARUNSPECIFIED
Hatori, NUNSPECIFIED
Sugawara, MUNSPECIFIED
Date : 6 November 2006
Identification Number : 10.1063/1.2387114
Uncontrolled Keywords : DENSITY-OF-STATES, MODULATION
Depositing User : Mr Adam Field
Date Deposited : 27 May 2010 14:09
Last Modified : 23 Sep 2013 18:28
URI: http://epubs.surrey.ac.uk/id/eprint/476

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