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Electrical characterization of MgO tunnel barriers grown on InAs (001) epilayers

Magnus, F, Clowes, SK, Gilbertson, AM, Branford, WR, Barkhoudarov, ED, Cohen, LF, Singh, LJ, Barber, ZH, Blamire, MG, Buckle, PD, Buckle, L, Ashley, T, Eustace, DA and McComb, DW (2007) Electrical characterization of MgO tunnel barriers grown on InAs (001) epilayers APPLIED PHYSICS LETTERS, 91 (12). ? - ?. ISSN 0003-6951

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Abstract

The authors examine the electrical properties of ultrathin MgO barriers grown on (001) InAs epilayers and the dependence on InAs surface pretreatment and growth conditions. Pretreatment improves the yield of tunnel junctions and changes the roughness of the interface between oxide and semiconductor. Electrical characterization confirms that tunnel barriers with appropriate values of interface resistance for efficient spin injection/detection have been achieved. Using the Rowell criteria and various tunneling models, the authors show that single step tunneling occurs above 150 K. Incorporating a thermal smearing model suggests that tunneling is the dominant transport process down to 10 K.

Item Type: Article
Uncontrolled Keywords: Science & Technology, Physical Sciences, Physics, Applied, Physics, SPIN INJECTION, SEMICONDUCTOR, JUNCTIONS, MAGNETORESISTANCE, TEMPERATURE, CONDUCTANCE, DEPENDENCE, METAL
Related URLs:
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Faculty of Engineering and Physical Sciences > Physics
Depositing User: Mr Adam Field
Date Deposited: 27 May 2010 14:09
Last Modified: 23 Sep 2013 18:28
URI: http://epubs.surrey.ac.uk/id/eprint/470

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