Tuning the inherent magnetoresistance of InSb thin films
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Zhang, T, Harris, JJ, Branford, WR, Bugoslavsky, YV, Clowes, SK, Cohen, LF, Husmann, A and Solin, SA (2006) Tuning the inherent magnetoresistance of InSb thin films APPLIED PHYSICS LETTERS, 88 (1). ? - ?. ISSN 0003-6951
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Abstract
We have investigated the 300 K inherent magnetoresistance of undoped InSb epilayers grown on GaAs(001) by molecular-beam epitaxy. The magnetoresistance of these films can be described well using a simplified model that incorporates gradation of properties away from the InSb/GaAs interface and the interplay between conduction and impurity bands. Although there is no significant intrinsic contribution in InSb bulk crystalline (001) materials due to its isotropic Fermi surface and mobility tensor, the linear and quadratic terms in the magnetoresistance as well as the overall magnitude can be tuned by varying the film thickness from 100 to 2000 nm.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Science & Technology, Physical Sciences, Physics, Applied, Physics, IMPURITY BAND CONDUCTION, MOLECULAR-BEAM EPITAXY, PARALLEL CONDUCTION, MAGNETIC-FIELD, SEMICONDUCTORS, TRANSPORT, MOBILITY, GAAS(100), SENSORS, DENSITY |
| Divisions: | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics Faculty of Engineering and Physical Sciences > Physics |
| ID Code: | 454 |
| Deposited By: | Mr Adam Field |
| Deposited On: | 27 May 2010 15:09 |
| Last Modified: | 08 Jun 2013 15:52 |
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