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Tuning the inherent magnetoresistance of InSb thin films

Zhang, T, Harris, JJ, Branford, WR, Bugoslavsky, YV, Clowes, SK, Cohen, LF, Husmann, A and Solin, SA (2006) Tuning the inherent magnetoresistance of InSb thin films APPLIED PHYSICS LETTERS, 88 (1). ? - ?. ISSN 0003-6951

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Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Faculty of Engineering and Physical Sciences > Physics
Authors :
AuthorsEmail
Zhang, TUNSPECIFIED
Harris, JJUNSPECIFIED
Branford, WRUNSPECIFIED
Bugoslavsky, YVUNSPECIFIED
Clowes, SKUNSPECIFIED
Cohen, LFUNSPECIFIED
Husmann, AUNSPECIFIED
Solin, SAUNSPECIFIED
Date : 2 January 2006
Identification Number : 10.1063/1.2162666
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, IMPURITY BAND CONDUCTION, MOLECULAR-BEAM EPITAXY, PARALLEL CONDUCTION, MAGNETIC-FIELD, SEMICONDUCTORS, TRANSPORT, MOBILITY, GAAS(100), SENSORS, DENSITY
Related URLs :
Depositing User : Mr Adam Field
Date Deposited : 27 May 2010 14:09
Last Modified : 12 Feb 2015 02:37
URI: http://epubs.surrey.ac.uk/id/eprint/454

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