University of Surrey

Test tubes in the lab Research in the ATI Dance Research

Uphill diffusion of ultralow-energy boron implants in preamorphized silicon and silicon-on-insulator

Ferri, M, Solmi, S, Giubertoni, D, Bersani, M, Hamilton, JJ, Kah, M, Kirkby, K, Collart, EJH and Cowern, NEB (2007) Uphill diffusion of ultralow-energy boron implants in preamorphized silicon and silicon-on-insulator JOURNAL OF APPLIED PHYSICS, 102 (10). ? - ?. ISSN 0021-8979

[img]
Preview
PDF
fulltext.pdf

Download (513kB)
Item Type: Article
Uncontrolled Keywords: Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, OF-RANGE DEFECTS, DOPANT PROFILES, ULTRASHALLOW JUNCTION, SI/SIO2 INTERFACE, NEAR-SURFACE, ACTIVATION, BEHAVIOR, DAMAGE, MODEL, SI
Related URLs:
Divisions: Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre
Depositing User: Mr Adam Field
Date Deposited: 27 May 2010 14:09
Last Modified: 06 Dec 2014 14:35
URI: http://epubs.surrey.ac.uk/id/eprint/451

Actions (login required)

View Item View Item

Downloads

Downloads per month over past year


Information about this web site

© The University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom.
+44 (0)1483 300800