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Uphill diffusion of ultralow-energy boron implants in preamorphized silicon and silicon-on-insulator

Ferri, M, Solmi, S, Giubertoni, D, Bersani, M, Hamilton, JJ, Kah, M, Kirkby, K, Collart, EJH and Cowern, NEB (2007) Uphill diffusion of ultralow-energy boron implants in preamorphized silicon and silicon-on-insulator JOURNAL OF APPLIED PHYSICS, 102 (10). ? - ?. ISSN 0021-8979

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Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Ion Beam Centre
Authors :
AuthorsEmail
Ferri, MUNSPECIFIED
Solmi, SUNSPECIFIED
Giubertoni, DUNSPECIFIED
Bersani, MUNSPECIFIED
Hamilton, JJUNSPECIFIED
Kah, MUNSPECIFIED
Kirkby, KUNSPECIFIED
Collart, EJHUNSPECIFIED
Cowern, NEBUNSPECIFIED
Date : 15 November 2007
Identification Number : 10.1063/1.2812676
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, OF-RANGE DEFECTS, DOPANT PROFILES, ULTRASHALLOW JUNCTION, SI/SIO2 INTERFACE, NEAR-SURFACE, ACTIVATION, BEHAVIOR, DAMAGE, MODEL, SI
Related URLs :
Depositing User : Mr Adam Field
Date Deposited : 27 May 2010 14:09
Last Modified : 14 Feb 2015 14:34
URI: http://epubs.surrey.ac.uk/id/eprint/451

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