Direct Monitoring of the Excited State Population in Biased SiGe Valence Band Quantum Wells by Femtosecond Resolved Photocurrent Experiments
Rauter, P, Fromherz, T, Bauer, G, Vinh, N Q, Murdin, B N, Phillips, J P, Pidgeon, C R, Diehl, L, Dehlinger, G and Grutzmacher, D (2006) Direct Monitoring of the Excited State Population in Biased SiGe Valence Band Quantum Wells by Femtosecond Resolved Photocurrent Experiments Applied Physics Letters, 89 (21).
The authors report a direct measurement of the optical phonon intersubband hole relaxation time in a SiGe heterostructure and a quantitative determination of hole relaxation under electrically active conditions. The results were obtained by femtosecond resolved pump-pump photocurrent experiments using a free electron laser (wavelength 7.9 mu m). Additionally, the intensity dependence of the nonlinear photocurrent response was measured. Both types of experiments were simulated using a density matrix description. With one parameter set, a consistent modeling was achieved confirming the significance of the extracted heavy hole relaxation times. For an intersublevel spacing of 160 meV, a value of 550 fs was obtained. (c) 2006 American Institute of Physics.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Faculty of Engineering and Physical Sciences > Physics
|Date :||1 January 2006|
|Identification Number :||https://doi.org/10.1063/1.2397004|
|Additional Information :||Published in <i>Applied Physics Letters,</i> Vol. 89, Iss. 21. Copyright 2006 American Institute of Physics. Click <a href=http://apl.aip.org/>here</a> to access the journal's webpage.|
|Depositing User :||Mr Adam Field|
|Date Deposited :||27 May 2010 14:09|
|Last Modified :||23 Sep 2013 18:28|
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