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The properties and deposition process of GaN films grown by reactive sputtering at low temperatures

Knox-Davies, EC, Shannon, JM and Silva, SRP (2006) The properties and deposition process of GaN films grown by reactive sputtering at low temperatures JOURNAL OF APPLIED PHYSICS, 99 (7). ? - ?. ISSN 0021-8979

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Item Type: Article
Divisions : Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre
Authors :
AuthorsEmail
Knox-Davies, ECUNSPECIFIED
Shannon, JMUNSPECIFIED
Silva, SRPUNSPECIFIED
Date : 1 April 2006
Identification Number : 10.1063/1.2186380
Uncontrolled Keywords : Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, NITRIDE THIN-FILMS, MOLECULAR-BEAM EPITAXY, GALLIUM NITRIDE, OPTICAL-PROPERTIES, GAAS, BIAS, ALN
Related URLs :
Depositing User : Mr Adam Field
Date Deposited : 27 May 2010 14:09
Last Modified : 15 Feb 2015 02:34
URI: http://epubs.surrey.ac.uk/id/eprint/445

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