The properties and deposition process of GaN films grown by reactive sputtering at low temperatures

Knox-Davies, EC, Shannon, JM and Silva, SRP (2006) The properties and deposition process of GaN films grown by reactive sputtering at low temperatures JOURNAL OF APPLIED PHYSICS, 99 (7). ? - ?. ISSN 0021-8979

Preview

PDF fulltext.pdf Download (412kB)

Item Type:	Article
Uncontrolled Keywords:	Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, NITRIDE THIN-FILMS, MOLECULAR-BEAM EPITAXY, GALLIUM NITRIDE, OPTICAL-PROPERTIES, GAAS, BIAS, ALN
Related URLs:	Author
Divisions:	Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre
Depositing User:	Mr Adam Field
Date Deposited:	27 May 2010 14:09
Last Modified:	17 Jan 2015 14:41
URI:	http://epubs.surrey.ac.uk/id/eprint/445

Actions (login required)

View Item

Downloads