The properties and deposition process of GaN films grown by reactive sputtering at low temperatures

Knox-Davies, EC, Shannon, JM and Silva, SRP (2006) The properties and deposition process of GaN films grown by reactive sputtering at low temperatures JOURNAL OF APPLIED PHYSICS, 99 (7), ARTN 0.

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Item Type:	Article
Divisions :	Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre
Authors :	Authors Email ORCID Knox-Davies, EC UNSPECIFIED UNSPECIFIED Shannon, JM UNSPECIFIED UNSPECIFIED Silva, SRP UNSPECIFIED UNSPECIFIED
Date :	1 April 2006
Identification Number :	https://doi.org/10.1063/1.2186380
Uncontrolled Keywords :	Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, NITRIDE THIN-FILMS, MOLECULAR-BEAM EPITAXY, GALLIUM NITRIDE, OPTICAL-PROPERTIES, GAAS, BIAS, ALN
Related URLs :	Author
Depositing User :	Mr Adam Field
Date Deposited :	27 May 2010 14:09
Last Modified :	15 Feb 2015 02:34
URI:	http://epubs.surrey.ac.uk/id/eprint/445

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