The properties and deposition process of GaN films grown by reactive sputtering at low temperatures
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Knox-Davies, EC, Shannon, JM and Silva, SRP (2006) The properties and deposition process of GaN films grown by reactive sputtering at low temperatures JOURNAL OF APPLIED PHYSICS, 99 (7), ARTN 0.
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| Item Type: | Article | ||||||||||||
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| Divisions : | Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Nano-Electronics Centre | ||||||||||||
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| Date : | 1 April 2006 | ||||||||||||
| Identification Number : | 10.1063/1.2186380 | ||||||||||||
| Uncontrolled Keywords : | Science & Technology, Physical Sciences, Physics, Applied, Physics, PHYSICS, APPLIED, NITRIDE THIN-FILMS, MOLECULAR-BEAM EPITAXY, GALLIUM NITRIDE, OPTICAL-PROPERTIES, GAAS, BIAS, ALN | ||||||||||||
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| Depositing User : | Mr Adam Field | ||||||||||||
| Date Deposited : | 27 May 2010 14:09 | ||||||||||||
| Last Modified : | 31 Oct 2017 13:58 | ||||||||||||
| URI: | http://epubs.surrey.ac.uk/id/eprint/445 |
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