Geometric Manipulation of the High-Field Linear Magnetoresistance in InSb Epilayers on GaAs(001)
Branford, W R, Husmann, A, Solin, S A, Clowes, S K, Zhang, T, Bugoslavsky, Y V and Cohen, L F (2005) Geometric Manipulation of the High-Field Linear Magnetoresistance in InSb Epilayers on GaAs(001) Applied Physics Letters, 86 (20).
We address the inherent high-field magnetoresistance (MR) of indium antimonide epilayers on GaAs (001), studying the modification of the MR when processed into a set of geometries. The changes produced by the geometries are quite subtle. The extraordinary MR geometry produces the highest low-field MR while the Corbino geometry produces the largest high-field magnetoresistance. We demonstrate that any material with an unsaturating linear intrinsic MR, will also have an unsaturating linear Corbino MR, and that the ideal material for linear MR sensors in conventional geometries would have a high mobility and a small, linear intrinsic MR.
|Divisions :||Faculty of Engineering and Physical Sciences > Electronic Engineering > Advanced Technology Institute > Photonics
Faculty of Engineering and Physical Sciences > Physics
|Date :||1 January 2005|
|Identification Number :||https://doi.org/10.1063/1.1923755|
|Additional Information :||Published in <i>Applied Physics Letters,</i> Vol. 86. Copyright 2005 American Institute of Physics. Click <a href=http://apl.aip.org/apl/ >here</a> to access the journal's website.|
|Depositing User :||Mr Adam Field|
|Date Deposited :||27 May 2010 14:09|
|Last Modified :||23 Sep 2013 18:28|
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